Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs
ZHANG Chun-Wei1 , LIU Si-Yang1 , SUN Wei-Feng1** , ZHOU Lei-Lei1 , ZHANG Yi1 , SU Wei2 , ZHANG Ai-Jun2 , LIU Yu-Wei2 , HU Jiu-Li2 , HE Xiao-Wei2
1 National ASIC System Engineering Technology Research Center, Southeast University, Nanjing 2100962 CSMC Technologies Corporation, Wuxi 214028
Abstract ：The dependencies of hot-carrier-induced degradations on the effective channel length L ch, eff are investigated for n-type metal-oxide-semiconductor field effect transistor (MOSFETs). Our experiments find that, with decreasing L ch, eff , the saturation drain current (I dsat ) degradation is unexpectedly alleviated. The further study demonstrates that the anomalous L ch, eff dependence of I dsat degradation is induced by the increasing influence of the substrate current degradation on the I dsat degradation with L ch, eff reducing.
收稿日期: 2015-04-08
出版日期: 2015-09-02
:
85.30.Tv
(Field effect devices)
85.30.De
(Semiconductor-device characterization, design, and modeling)
85.30.-z
(Semiconductor devices)
引用本文:
. [J]. 中国物理快报, 2015, 32(08): 88502-088502.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/32/8/088502
或
https://cpl.iphy.ac.cn/CN/Y2015/V32/I08/88502
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2015, Vol. 32 
