Molecular Beam Epitaxy of Zero Lattice-Mismatch InAs/GaSb Type-II Superlattice
Hai-Long Yu, Hao-Yue Wu, Hai-Jun Zhu, Guo-Feng Song, Yun Xu**
Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, BeiJing 100083
Abstract ：Type-II InAs/GaSb superlattices made of 13 InAs monolayers (MLs) and 7 GaSb MLs are grown on GaSb substrates by solid source molecular beam epitaxy. To obtain lattice-matched structures, thin InSb layers are inserted between InAs and GaSb layers. We complete a series of experiments to investigate the influence of the InSb deposition time, V/III beam-equivalent pressure ratio and interruption time between each layer, and then characterize the superlattice (SL) structures with high-resolution x-ray diffraction and atomic force microscopy. The optimized growth parameters are applied to grow the 100-period SL structure, resulting in the full-width half-maximum of 29.55 arcsec for the first SL satellite peak and zero lattice-mismatch between the zero-order SL peak and the GaSb substrate peak.
收稿日期: 2016-08-08
出版日期: 2016-12-29
:
81.05.Ea
(III-V semiconductors)
81.10.Pq
(Growth in vacuum)
74.78.Fk
(Multilayers, superlattices, heterostructures)
81.15.-z
(Methods of deposition of films and coatings; film growth and epitaxy)
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2016, Vol. 33 
