Micro-Mechanism of Silicon-Based Waveguide Surface Smoothing in Hydrogen Annealing
Qian-Qian Duan1,2 , Xin-Yu Ren1,2 , Ao-Qun Jian1,2 , Hui Zhang1,2 , Jian-Long Ji1,2 , Qiang Zhang1,2 , Wen-Dong Zhang1,2 , Sheng-Bo Sang1,2**
1 Micro Nano System Research Center, College of Information Engineering, Taiyuan University of Technology, Taiyuan 0306002 Key Laboratory of Advanced Transducers and Intelligent Control System (Ministry of Education), Taiyuan University of Technology, Taiyuan 030600
Abstract ：The micro-mechanism of the silicon-based waveguide surface smoothing is investigated systematically to explore the effects of silicon-hydrogen bonds on high-temperature hydrogen annealing waveguides. The effect of silicon-hydrogen bonds on the surface migration movement of silicon atoms and the waveguide surface topography are revealed. The micro-migration from an upper state to a lower state of silicon atoms is driven by silicon-hydrogen bonding, which is the key to ameliorate the rough surface morphology of the silicon-based waveguide. The process of hydrogen annealing is experimentally validated based on the simulated parameters. The surface roughness declines from 1.523 nm to 0.461 nm.
收稿日期: 2016-08-20
出版日期: 2016-12-29
:
68.35.Ct
(Interface structure and roughness)
68.35.Md
(Surface thermodynamics, surface energies)
68.47.Fg
(Semiconductor surfaces)
引用本文:
. [J]. 中国物理快报, 2016, 33(12): 126801-126801.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/33/12/126801
或
https://cpl.iphy.ac.cn/CN/Y2016/V33/I12/126801
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2016, Vol. 33 
