Research of Trap and Electron Density Distributions in the Interface of Polyimide/Al$_{2}$O$_{3}$ Nanocomposite Films Based on IDC and SAXS
Yuan-Yuan Liu1,2, Jing-Hua Yin1**, Xiao-Xu Liu1, Duo Sun1, Ming-Hua Chen1, Zhong-Hua Wu3, Bo Su1
1Key Laboratory of Engineering Dielectric and Its Applications (Ministry of Education), Harbin University of Science and Technology, Harbin 150080 2Harbin Cambridge College, Harbin 150069 3Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049
Abstract：The distributions of traps and electron density in the interfaces between polyimide (PI) matrix and Al$_{2}$O$_{3}$ nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering (SAXS) tests. According to the electron density distribution for quasi two-phase mixture doped by spherical nanoparticles, the electron densities in the interfaces of PI/Al$_{2}$O$_{3}$ nanocomposite films are evaluated. The trap level density and carrier mobility in the interface are studied. The experimental results show that the distribution and the change rate of the electron density in the three layers of interface are different, indicating different trap distributions in the interface layers. There is a maximum trap level density in the second layer, where the maximum trap level density for the nanocomposite film doped by 25 wt% is $1.054\times10^{22}$ eV$\cdot$m$^{-3}$ at 1.324 eV, resulting in the carrier mobility reducing. In addition, both the thickness and the electron density of the nanocomposite film interface increase with the addition of the doped Al$_{2}$O$_{3}$ contents. Through the study on the trap level distribution in the interface, it is possible to further analyze the insulation mechanism and to improve the performance of nano-dielectric materials.
. [J]. 中国物理快报, 2017, 34(4): 48201-048201.
Yuan-Yuan Liu, Jing-Hua Yin, Xiao-Xu Liu, Duo Sun, Ming-Hua Chen, Zhong-Hua Wu, Bo Su. Research of Trap and Electron Density Distributions in the Interface of Polyimide/Al$_{2}$O$_{3}$ Nanocomposite Films Based on IDC and SAXS. Chin. Phys. Lett., 2017, 34(4): 48201-048201.
Alison J M, Mazzanti G, Montanari G C and Palmieri F 2002 Annu. Report Conf. Electr. Insulation Dielectric Phenom. (Cancun Mexico 20–24 October 2002) p 35
2017, Vol. 34 
