1Physics Department, Materials Genome Institute, and International Centre for Quantum and Molecular Structures, Shanghai University, Shanghai 200444 2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 3School of Mathematics, Physics and Statistics, Shanghai University of Engineering Science, Shanghai 201600
Abstract：We report an effective method to improve the formation of nickel stanogermanide (NiGeSn) by the incorporation of a platinum (Pt) interlayer. After the Ni/Pt/GeSn samples are annealed we obtain uniform NiGeSn thin films, which are characterized by means of sheet resistance, atomic force microscopy, scanning electron microscopy, cross-section transmission electron microscopy, and energy dispersive x-ray spectroscopy. These results show that the presence of Pt increases the smoothness and uniform morphology of NiGeSn films.
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2018, Vol. 35 
