1Department of Electronics & Communication Engineering, National Institute of Technology, Rourkela 769008, India 2Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi 221005, India
Abstract：A threshold voltage model for dual-metal quadruple-gate (DMQG) metal-oxide-semiconductor field effect transistors (MOSFETs) is presented by using the virtual-cathode potential formulated from the quasi-3D scaling equation adopting the equivalent number of gates concept. The threshold voltage of the DMQG MOSFET is formulated analytically for different length ratios of control and screen gates at different channel lengths. Moreover, the drain induced barrier lowering of the DMQG MOSFET is also analyzed and compared with the same quadruple-gate MOSFET. The analytical model results are compared with the 3D ATLAS simulation data to validate the derived model.
2014, Vol. 31 
