Resistive Switching Behavior in Amorphous Aluminum Oxide Film Grown by Chemical Vapor Deposition
QUAN Xiao-Tong, ZHU Hui-Chao** , CAI Hai-Tao, ZHANG Jia-Qi, WANG Xiao-Jiao
School of Electronic Science and Technology, Dalian University of Technology, Dalian 116024
Abstract ：The repeatable bipolar resistive switching phenomenon is observed in amorphous Al2 O3 prepared by metal-organic chemical vapor deposition on ITO glass, with ITO as the bottom electrode and Ag as the top electrode. The crystal structure, morphology, composition and optical properties of Al2 O3 thin films are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and ultraviolet-visible-infrared spectroscopy, respectively. The electronic character of Ag/Al2 O3 /ITO structure is tested by an Agilent B1500A. The device shows a typical bipolar resistive switching behavior under the dc voltage sweep mode at room temperature. The variation ratio between HRS and LRS is larger than nearly three orders of magnitude, which indicates the good potential of this structure in future resistive random access memory (ReRAM) applications. Based on the conductive filament model, the high electric field is considered the main reason for the resistive switching according to our measurements.
出版日期: 2014-06-30
:
81.05.Gc
(Amorphous semiconductors)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
85.30.De
(Semiconductor-device characterization, design, and modeling)
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2014, Vol. 31 
