Structural Variation and Its Influence on the $1/f$ Noise of a-Si$_{1-x}$Ru$_{x}$ Thin Films Embedded with Nanocrystals
Chong Wang1 , Hao Zhong1 , Eddy Simoen2 , Xiang-Dong Jiang3 , Ya-Dong Jiang1 , Wei Li1**
1 State Key Lab of Electronic Thin Films & Integrated Devices, University of Electronic Science and Technology of China, Chengdu 6100542 IMEC, Kapeldreef 75, Leuven B-3001, Belgium3 School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054
Abstract ：The structural variation and its influence on the $1/f$ noise of a-Si$_{1-x}$Ru$_{x}$ thin films are investigated by Raman spectroscopy, transmission electron microscopy, and low frequency noise measurement. The Ru atoms are introduced into the amorphous silicon thin films by rf magnetron co-sputtering. Ru$_{2}$Si nanocrystals are found in the as-deposited samples. It is shown that the $1/f$ noise of the films can be reduced by a slight doping with Ru atoms. Moreover, both the microstructure and the $1/f$ noise performance of a-Si$_{1-x}$Ru$_{x}$ thin films could be improved through a high-temperature annealing treatment.
收稿日期: 2018-07-05
出版日期: 2019-01-22
:
81.05.Gc
(Amorphous semiconductors)
68.55.jm
(Texture)
68.37.-d
(Microscopy of surfaces, interfaces, and thin films)
73.61.-r
(Electrical properties of specific thin films)
[1] Gudiksen M S, Lauhon L J, Wang J, Smith D C and Lieber C M 2002 Nature 415 617 [2] Yang P, Yan R and Fardy M 2010 Nano Lett. 10 1529 [3] Hooge F N 1994 IEEE Trans. Electron Devices 41 1926 [4] Tanaka T, Sano E, Imai M and Akiyama K 2010 Jpn. J. Appl. Phys. 49 055101 [5] Fung T C, Baek G and Kanicki J 2010 J. Appl. Phys. 108 074518 [6] Dimitriadis C A, Kamarinos G and Brini J 2001 IEEE Electron Device Lett. 22 381 [7] Doria R T, Trevisoli R D, Souza M and Pavanello M A 2013 Microelectron. Eng. 109 79 [8] Lopes V C, Syllaios A J, Whitfield D, Shrestha K and Littler C L 2015 Mater. Res. Soc. Symp. Proc. 1770 25 [9] Lopes V C, Syllaios A J and Littler C L 2017 J. Non-Cryst. Solids 459 176 [10] Castilho J H, Chambouleyron I, Marques F C, Rettori C and Alvarez F 1991 Phys. Rev. B 43 8946 [11] Kumeda M, Jinno Y, Watanabe I and Shimizu T 1977 Solid State Commun. 23 833 [12] Castilho J H, Marques F C, Barberis G E, Rettori C, Alvarez F and Chambouleyron I 1989 Phys. Rev. B 39 2860 [13] Kuksenkov D V, Temkin H, Osinsky A, Gaska R and Khan M A 1998 Appl. Phys. Lett. 72 1365 [14] Li S, Jiang Y, Wu Z, Wu J, Ying Z, Wang Z, Li W and Salamo G 2011 Nanoscale Res. Lett. 6 281 [15] Guo A, Li W, Jiang X, Wang C, Lu M and Jiang Y 2015 Mater. Lett. 143 80 [16] He J, Li W, Xu R, Guo A, Wang Y and Jiang Y 2013 J. Phys. D 46 475107 [17] Guo A, Li W, Jiang X, Wang C and Jiang Y 2015 J. Raman Spectrosc. 46 619 [18] DeFelice L J 1976 J. Appl. Phys. 47 350 [19] Li S B, Wu Z M, Jiang Y D, Li W, Liao N M and Yu J S 2008 Nanotechnology 19 085706 [20] Marinov M and Zotov N 1997 Phys. Rev. B 55 2938 [21] Vandamme L K J and Hooge F N 2008 IEEE Trans. Electron Devices 55 3070 [22] Vandamme L K J, Li X and Rigaud D 1994 IEEE Trans. Electron Devices 41 1936 [23] Rhayem J, Rigaud D, Valenza M, Szydlo N and Lebrun H 2000 J. Appl. Phys. 87 1983 [24] Necliudov P V, Rumyantsev S L, Shur M S, Gundlach D J and Jackson T N 2000 J. Appl. Phys. 88 5395 [25] Lukyanchikova B N, Petrichuk M V, Garbar N, Simoen E, Poyai A and Claeys C 2000 IEEE Electron Device Lett. 21 408
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
.
[7]
GONG Yue-Feng;SONG Zhi-Tang;LING Yun;LIU Yan;LI Yi-Jin;FENG Song-Lin. Three-Dimensional Finite Element Simulations for the Thermal Characteristics of PCRAMs with Different Buffer Layer Materials
[8]
GONG Yue-Feng;SONG Zhi-Tang;LING Yun;LIU Yan;FENG Song-Lin. Simulation of SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling
[9]
DING Xu-Li;LI Qing-Shan;KONG Xiang-He. Optical and Electrical Properties Evolution of Diamond-Like Carbon Thin Films with Deposition Temperature
[10]
GONG Yue-Feng;LING Yun;SONG Zhi-Tang;FENG Song-Lin. Simulation of Phase-Change Random Access Memory with Ring-Type Contactor for Low Reset Current by Finite Element Modelling
[11]
Raid A. Ismail;Kadhim A. Hubeatir;Abdullah K. Abass. Amorphous/Crystalline (n-n) Si Heterojunction Photodetector Made by Q-Switched 0.532-mm Laser Pulses with Novel Technique
[12]
DONG Liang;YUE Rui-Feng;LIU Li-Tian;ZHANG Wan-Jie. Freestanding a-Si Thin Film Transistor for Room-Temperature Infrared Detection
[13]
MAO Dong-sheng;ZHAO Jun;LI Wei;WANG Xi;LIU Xiang-huai;ZHU Yu-kun;ZHOU Jiang-yun;FAN Zhong;LI Qiong;XU Jing-fang. Electron Field Emission from Different sp3 Content Diamond-Like Carbon Films
2019, Vol. 36 
