Three-Dimensional Finite Element Simulations for the Thermal Characteristics of PCRAMs with Different Buffer Layer Materials
GONG Yue-Feng1,2, SONG Zhi-Tang1, LING Yun1, LIU Yan1, LI Yi-Jin1, FENG Song-Lin1
1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2Graduate School of the Chinese Academic of Sciences, Beijing 100049
Three-Dimensional Finite Element Simulations for the Thermal Characteristics of PCRAMs with Different Buffer Layer Materials
GONG Yue-Feng1,2, SONG Zhi-Tang1, LING Yun1, LIU Yan1, LI Yi-Jin1, FENG Song-Lin1
1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2Graduate School of the Chinese Academic of Sciences, Beijing 100049
Simulation of the heat consumption in phase change random access memories (PCRAMs) is investigated by a three-dimensional finite element model. It is revealed that the thermal conductivity and electrical conductivity of the buffer layer are crucial in controlling the heating efficiency in RESET process. The buffer layer materials W, TiN, WO3, TiO2 and poly-germanium (poly-Ge) are applied in the simulation respectively, and compared with each other. The simulation results show that limitation of electrical conductivity is effective on heating efficiency and the limitation of thermal conductivity is important on the reliable RESET process.
Simulation of the heat consumption in phase change random access memories (PCRAMs) is investigated by a three-dimensional finite element model. It is revealed that the thermal conductivity and electrical conductivity of the buffer layer are crucial in controlling the heating efficiency in RESET process. The buffer layer materials W, TiN, WO3, TiO2 and poly-germanium (poly-Ge) are applied in the simulation respectively, and compared with each other. The simulation results show that limitation of electrical conductivity is effective on heating efficiency and the limitation of thermal conductivity is important on the reliable RESET process.
GONG Yue-Feng;SONG Zhi-Tang;LING Yun;LIU Yan;LI Yi-Jin;FENG Song-Lin. Three-Dimensional Finite Element Simulations for the Thermal Characteristics of PCRAMs with Different Buffer Layer Materials[J]. 中国物理快报, 2010, 27(8): 88501-088501.
GONG Yue-Feng, SONG Zhi-Tang, LING Yun, LIU Yan, LI Yi-Jin, FENG Song-Lin. Three-Dimensional Finite Element Simulations for the Thermal Characteristics of PCRAMs with Different Buffer Layer Materials. Chin. Phys. Lett., 2010, 27(8): 88501-088501.
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2010, Vol. 27 
