中国物理快报  2008, Vol. 25 Issue (9): 3455-3458    
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Simulation of Phase-Change Random Access Memory with Ring-Type Contactor for Low Reset Current by Finite Element Modelling
GONG Yue-Feng1,2, LING Yun1, SONG Zhi-Tang1, FENG Song-Lin1
1The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academic of Sciences, Beijing 100049
Simulation of Phase-Change Random Access Memory with Ring-Type Contactor for Low Reset Current by Finite Element Modelling
GONG Yue-Feng1,2, LING Yun1, SONG Zhi-Tang1, FENG Song-Lin1
1The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academic of Sciences, Beijing 100049