Freestanding a-Si Thin Film Transistor for Room-Temperature Infrared Detection
DONG Liang, YUE Rui-Feng, LIU Li-Tian, ZHANG Wan-Jie
Institute of Microelectronics, Tsinghua University, Beijing 100084
Freestanding a-Si Thin Film Transistor for Room-Temperature Infrared Detection
DONG Liang;YUE Rui-Feng;LIU Li-Tian;ZHANG Wan-Jie
Institute of Microelectronics, Tsinghua University, Beijing 100084
关键词 ：
07.10.Cm ,
85.60.Gz ,
81.05.Gc
Abstract ： We present the fabrication and characterization of a novel uncooled infrared sensor for room-temperature infrared imaging. The sensitive element of the sensor is a freestanding amorphous silicon thin film transistor (a-Si TFT) with the temperature coefficient of the drain current (TCC) of 0.015-0.08/K. The TCC value is sensitive to the ambient temperature and can be controlled by the gate voltage of the a-Si TFT. The complete procedures based on the porous silicon micromachining technique for fabricating thermally isolated air bridges are described. The isolation structures have a thermal conductance of 5 x 10-6 W/K and a thermal capacitance of 4.9 x 10-8 J/K. The effects of the gate voltage on the performance figures such as responsivity, noise voltage and detectivity are described and analysed in details. The maximum detectivity reaches 4.33 x 10-8 cmHz1/2 W-1 at a chopping frequency of 27 Hz and a gate voltage of -15 V.
Key words ：
07.10.Cm
85.60.Gz
81.05.Gc
出版日期: 2004-02-01
:
07.10.Cm
(Micromechanical devices and systems)
85.60.Gz
(Photodetectors (including infrared and CCD detectors))
81.05.Gc
(Amorphous semiconductors)
引用本文:
DONG Liang;YUE Rui-Feng;LIU Li-Tian;ZHANG Wan-Jie. Freestanding a-Si Thin Film Transistor for Room-Temperature Infrared Detection[J]. 中国物理快报, 2004, 21(2): 262-265.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I2/262
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2004, Vol. 21 
