A Silicon Tunnel Field-Effect Transistor with an In Situ Doped Single Crystalline Ge Source for Achieving Sub-60 mV/decade Subthreshold Swing
LIU Yan, WANG Hong-Juan, YAN Jing, HAN Gen-Quan**
Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044
Abstract：We report the demonstration of an n-channel lateral Si tunnel field-effect transistor (TFET) with a single crystalline Ge source fabricated using the gate-last process. The p Ge source was in situ doped and grown at 320°C. An abrupt interface between Ge source and Si channel with type-II band alignment and a steep source doping profile (～1.5 nm/decade) formed the tunneling junction. This allows the realization of a TFET with a steep subthreshold swing of 49 mV/decade at room temperature and an ION/IOFF ratio of 107.
. [J]. 中国物理快报, 2013, 30(8): 88502-088502.
LIU Yan, WANG Hong-Juan, YAN Jing, HAN Gen-Quan. A Silicon Tunnel Field-Effect Transistor with an In Situ Doped Single Crystalline Ge Source for Achieving Sub-60 mV/decade Subthreshold Swing. Chin. Phys. Lett., 2013, 30(8): 88502-088502.
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2013, Vol. 30 
