A 50–60 V Class Ultralow Specific on-Resistance Trench Power MOSFET
HU Sheng-Dong1,2**, ZHANG Ling1, CHEN Wen-Suo2, LUO Jun2, TAN Kai-Zhou2, GAN Ping1, ZHU Zhi1, WU Xing-He1
1College of Communication Engineering, Chongqing University, Chongqing 400044 2No. 24 Research Institute, China Electronics Technology Group Corporation, Chongqing 400060
Abstract：A 50–60 V class ultralow specific on-resistance (Ron,sp) trench power MOSFET is proposed. The structure is characterized by an n+-layer which is buried on the top surface of the p-substrate and connected to the drain n+-region. The low-resistance n+-layer shortens the motion-path in high-resistance n? drift region for the carriers, and therefore, reduces the Ron,sp in the on-state. Electrical characteristics for the proposed power MOSFET are analyzed and discussed. The 50–60 V class breakdown voltages (VB) with Ron,sp less than 0.35 mΩ?cm2 are obtained. Compared with several power MOSFETs, the proposed power MOSFET has a significantly optimized dependence of Ron,sp on VB.
(Junction breakdown and tunneling devices (including resonance tunneling devices))
引用本文:
. [J]. Chin. Phys. Lett., 2012, 29(12): 128502-128502.
HU Sheng-Dong, ZHANG Ling, CHEN Wen-Suo, LUO Jun, TAN Kai-Zhou, GAN Ping, ZHU Zhi, WU Xing-He. A 50–60 V Class Ultralow Specific on-Resistance Trench Power MOSFET. Chin. Phys. Lett., 2012, 29(12): 128502-128502.
2012, Vol. 29 
