The Structural and Electrical Properties of Al/Pb(Zr0.52Ti0.48)O3/Al2O3/Si with an Al2O3 Layer Prepared by using the Molecular Atomic Deposition Method
YANG Yi1, ZHOU Chang-Jian1, PENG Ping-Gang1, XIE Dan1, REN Tian-Ling1**, PAN Xiao2, LIU Jing-Song3
1Tsinghua National Laboratory for Information Science and Technology & Institute of Microelectronics, Tsinghua University, Beijing 100084 2Department of Applied Physics, Yale University, New Haven CT, 06520, USA 3State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010
Abstract：The structural and electrical properties of a metal-ferroelectric-insulator-semiconductor (MFIS) structure with an Al2O3 layer prepared by using the molecular atomic deposition method and Pb(Zr0.52Ti0.48)O3 (PZT) deposited by the radio frequency magnetron sputtering method are investigated. PZT exhibits a very smooth surface and (110) orientation of the perovskite phase. The MFIS structure shows well-behaved clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization under a sweep voltage up to ±40 V. Memory windows of 1.9 V and 18.14 V in conjunction with leakage current density of 2.42×10?7 A/cm2 and 8.28×10?7 A/cm2 are obtained under sweep voltages of ±5 V and ±20 V, respectively.
(Liquid phase epitaxy; deposition from liquid phases (melts, solutions, And surface layers on liquids))
引用本文:
. [J]. Chin. Phys. Lett., 2012, 29(12): 128501-128501.
YANG Yi, ZHOU Chang-Jian, PENG Ping-Gang, XIE Dan, REN Tian-Ling, PAN Xiao, LIU Jing-Song. The Structural and Electrical Properties of Al/Pb(Zr0.52Ti0.48)O3/Al2O3/Si with an Al2O3 Layer Prepared by using the Molecular Atomic Deposition Method. Chin. Phys. Lett., 2012, 29(12): 128501-128501.
2012, Vol. 29 
