Temperature and Composition Dependence of GaNxAs1−x(0 < x ≤ 0.05) before and after Annealing

doi:10.1088/0256-307X/28/12/127801

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摘要 The parameters in the band-anticrossing model for GaN_xAs_1−x (0 < x ≤ 0.05) are obtained considering the effect of temperature and composition. It is found that the effect of composition on the N levels in the band-anticrossing model is weak. The temperature dependence of the N levels and the temperature dependence of the band gap energy of GaNAs are weaker than that of GaAs. In addition, the reason for a spectral blueshift and the effect of annealing on the parameters in the band-anticrossing model are also discussed.

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	ZHAO Chuan-Zhen
	LI Na-Na
	WEI Tong
	TANG Chun-Xiao

Abstract：The parameters in the band-anticrossing model for GaN_xAs_1−x (0 < x ≤ 0.05) are obtained considering the effect of temperature and composition. It is found that the effect of composition on the N levels in the band-anticrossing model is weak. The temperature dependence of the N levels and the temperature dependence of the band gap energy of GaNAs are weaker than that of GaAs. In addition, the reason for a spectral blueshift and the effect of annealing on the parameters in the band-anticrossing model are also discussed.

Key words： 78.20.-e 78.20.Bh

收稿日期: 2011-07-08 出版日期: 2011-11-29

:	78.20.-e	(Optical properties of bulk materials and thin films)
	78.20.Bh	(Theory, models, and numerical simulation)

引用本文:

ZHAO Chuan-Zhen**;LI Na-Na;WEI Tong;TANG Chun-Xiao . Temperature and Composition Dependence of GaN_xAs_1−x(0 < x ≤ 0.05) before and after Annealing[J]. 中国物理快报, 2011, 28(12): 127801-127801.
ZHAO Chuan-Zhen**, LI Na-Na, WEI Tong, TANG Chun-Xiao . Temperature and Composition Dependence of GaN_xAs_1−x(0 < x ≤ 0.05) before and after Annealing. Chin. Phys. Lett., 2011, 28(12): 127801-127801.

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https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/28/12/127801 或 https://cpl.iphy.ac.cn/CN/Y2011/V28/I12/127801

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