Enhancement of Er3+ Emission from an Er−Si Codoped Al2O3 Film by Stacking Si−Doped Al2O3 Sublayers
WANG Xiao1, JIANG Zui-Min1, XU Fei2,3**, MA Zhong-Quan2, XU Run4, YU Bin2, LI Ming-Zhu1, ZHENG Ling-Ling2, FAN Yong-Liang1, HUANG Jian4, LU Fang1
1State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 2SHU-SolarE R&D Lab, Department of Physics, College of Sciences, Shanghai University, Key Laboratory for Material Microstructures of Shanghai University, Shanghai 200444 3Instituto de Óptica, CSIC, Serrano 121, 28006, Madrid, Spain 4Department of Electronic Information Materials, School of Materials Science and Engineering, Shanghai University, Shanghai 200444
Enhancement of Er3+ Emission from an Er−Si Codoped Al2O3 Film by Stacking Si−Doped Al2O3 Sublayers
WANG Xiao1, JIANG Zui-Min1, XU Fei2,3**, MA Zhong-Quan2, XU Run4, YU Bin2, LI Ming-Zhu1, ZHENG Ling-Ling2, FAN Yong-Liang1, HUANG Jian4, LU Fang1
1State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 2SHU-SolarE R&D Lab, Department of Physics, College of Sciences, Shanghai University, Key Laboratory for Material Microstructures of Shanghai University, Shanghai 200444 3Instituto de Óptica, CSIC, Serrano 121, 28006, Madrid, Spain 4Department of Electronic Information Materials, School of Materials Science and Engineering, Shanghai University, Shanghai 200444
摘要A multilayer film (multi-film), consisting of alternate Er-Si-codoped Al2O3 (ESA) and Si−doped Al2O3 (SA) sublayers, is synthesized by co−sputtering from separated Er, Si, and Al2O3 targets. The dependence of Er3+ related photoluminescence (PL) properties on annealing temperatures over 700–1100°C is studied. The maximum intensity of Er3+ photoluminance (PL), about 10 times higher than that of the monolayer film, is obtained from the multi−film annealed at 950°C. The enhancement of Er3+ PL intensity is attributed to the energy transfer from the silicon nanocrystals (Si−NCs) to the neighboring Er3+ ions. The effective characteristic interaction distance (or the critical ET length) between Er and carriers (Si−NCs) is ∼3 nm. The PL intensity exhibits a nonmonotonic temperature dependence. Meanwhile, the PL integrated intensity at room temperature is about 30% higher than that at 14 K.
Abstract：A multilayer film (multi-film), consisting of alternate Er-Si-codoped Al2O3 (ESA) and Si−doped Al2O3 (SA) sublayers, is synthesized by co−sputtering from separated Er, Si, and Al2O3 targets. The dependence of Er3+ related photoluminescence (PL) properties on annealing temperatures over 700–1100°C is studied. The maximum intensity of Er3+ photoluminance (PL), about 10 times higher than that of the monolayer film, is obtained from the multi−film annealed at 950°C. The enhancement of Er3+ PL intensity is attributed to the energy transfer from the silicon nanocrystals (Si−NCs) to the neighboring Er3+ ions. The effective characteristic interaction distance (or the critical ET length) between Er and carriers (Si−NCs) is ∼3 nm. The PL intensity exhibits a nonmonotonic temperature dependence. Meanwhile, the PL integrated intensity at room temperature is about 30% higher than that at 14 K.
WANG Xiao;JIANG Zui-Min;XU Fei;**;MA Zhong-Quan;XU Run;YU Bin;LI Ming-Zhu;ZHENG Ling-Ling;FAN Yong-Liang;HUANG Jian;LU Fang
. Enhancement of Er3+ Emission from an Er−Si Codoped Al2O3 Film by Stacking Si−Doped Al2O3 Sublayers[J]. 中国物理快报, 2011, 28(12): 127802-127802.
WANG Xiao, JIANG Zui-Min, XU Fei, **, MA Zhong-Quan, XU Run, YU Bin, LI Ming-Zhu, ZHENG Ling-Ling, FAN Yong-Liang, HUANG Jian, LU Fang
. Enhancement of Er3+ Emission from an Er−Si Codoped Al2O3 Film by Stacking Si−Doped Al2O3 Sublayers. Chin. Phys. Lett., 2011, 28(12): 127802-127802.
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