2011, Vol. 28(12): 127801-127801    DOI: 10.1088/0256-307X/28/12/127801
	Temperature and Composition Dependence of GaNxAs1−x(0 < x ≤ 0.05) before and after Annealing
	ZHAO Chuan-Zhen1**, LI Na-Na2, WEI Tong3, TANG Chun-Xiao1
	1School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin 300160 2School of Textiles, Tianjin Polytechnic University, Tianjin 300160 3College of Science, Civil Aviation University of China, Tianjin 300300
	收稿日期 2011-07-08  修回日期 1900-01-01
	Supporting info
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