摘要An InAs/GaSb nanowire superlattice using GaAs for the impure layers is proposed. Dresselhaus spin-orbit coupling eliminates spin degeneracy, induces one miniband in the superlattices to split into two minibands and leads to complete spin polarization and excellent filtering by optimizing the well and barrier widths and GaAs layer distances.
Abstract：An InAs/GaSb nanowire superlattice using GaAs for the impure layers is proposed. Dresselhaus spin-orbit coupling eliminates spin degeneracy, induces one miniband in the superlattices to split into two minibands and leads to complete spin polarization and excellent filtering by optimizing the well and barrier widths and GaAs layer distances.
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