Abstract：We study the charge transport properties of the spin-selective Andreev reflection (SSAR) effect between a spin polarized scanning tunneling microscope (STM) tip and a Majorana zero mode (MZM). Considering both the MZM and the excited states, we calculate the conductance and the shot noise power of the noncollinear SSAR using scattering theory. We find that the excited states give rise to inside peaks. Moreover, we numerically calculate the shot noise power and the Fano factor of the SSAR effect. Our calculation shows that the shot noise power and the Fano factor are related to the angle between the spin polarization direction of the STM tip and that of the MZM, which provide additional characteristics to detect the MZM via SSAR.
Sun H H, Zhang K W, Hu L H, Li C, Wang G Y, Ma H Y, Xu Z A, Gao C L, Guan D D, Li Y Y, Liu C, Qian D, Zhou Y, Fu L, Li S C, Zhang F C and Jia J F 2016 Phys. Rev. Lett.116 257003
Datta S 1997 Electronic Transport in Mesoscopic Systems, Cambridge Studies in Semiconductor Physics, Microelectronic Engineering (Cambridge: Cambridge University Press)
2019, Vol. 36 
