Ultrafast Magnetization Precession in Perpendicularly Magnetized $L1_{0}$-MnAl Thin Films with Co$_{2}$MnSi Buffer Layers
Si-Wei Mao1,2, Jun Lu3, Long Yang4, Xue-Zhong Ruan4, Hai-Long Wang1,2, Da-Hai Wei1,2,3, Yong-Bing Xu4, Jian-Hua Zhao1,2,3**
1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100190 3Beijing Academy of Quantum Information Science, Beijing 100193 4Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
Abstract：Perpendicularly magnetized $L1_{0}$-MnAl thin films with Co$_{2}$MnSi buffer layers were prepared on GaAs (001) substrates by molecular-beam epitaxy (MBE). The samples with high crystalline quality show a maximum uniaxial perpendicular magnetic anisotropy constant of $1.4\times 10^{7}$ erg/cm$^{3}$. Ultrafast spin dynamics with a magnetization precession frequency up to 200 GHz was investigated by using time-resolved magneto-optical Kerr effect (TRMOKE) measurements, from which the Gilbert damping constant $\alpha$ of epitaxial $L1_{0}$-MnAl thin films is evaluated to be less than 0.0175. This work provides an important reference for analyzing the current-induced magnetization switching process in MnAl-based spintronic devices.
Khvalkovskiy A V, ApalKov D, Watts S, Chepulskii R, Beach R S, Ong A, Tang X, Driskill-Smith A, Butler W H, Visscher P B, Lottis D, Chen E, Nikitin V and Krounbi M 2013 J. Phys. D46 139601
2020, Vol. 37 
