Magnetic Properties of Co-Doped TiO2 Films Grown on TiN Buffered Silicon Substrates
XIA Yu-Qian1 , SUN Lei1** , XU Hao1 , HAN Jing-Wen1 , ZHANG Yi-Bo1 , WANG Yi1 , ZHANG Sheng-Dong1,2
1 Institute of Microelectronics, Peking University, Beijing 1008712 Shenzhen Graduate School, Peking University, Shenzhen 518055
Abstract ：Co-doped TiO2 thin films are grown on TiN buffered silicon substrates by the pulsed laser deposition method and then hydrogenated. Transmission electron microscopy and high-angle annular dark-field scanning transmission electron microscopy measurements have shown that the TiN buffer layer can suffer a 400°C deposition temperature and prevent the growth of silicon dioxide on silicon. After that, the room temperature ferromagnetism behaviors are observed in the hydrogenated samples, which are measured by the alternating gradient magnetometer. X-ray photoelectron spectroscopy and x-ray absorption fine structure measurements have revealed the existence of cobalt clusters. According to the material analysis, the magnetic behavior after hydrogenation is suggested to be induced by the enhancement of cobalt clusters.
收稿日期: 2013-11-08
出版日期: 2014-02-28
:
75.50.Pp
(Magnetic semiconductors)
85.75.-d
(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
61.05.cj
(X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.)
引用本文:
. [J]. 中国物理快报, 2014, 31(2): 27501-027501.
2 Films Grown on TiN Buffered Silicon Substrates. Chin. Phys. Lett., 2014, 31(2): 27501-027501.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/31/2/027501
或
https://cpl.iphy.ac.cn/CN/Y2014/V31/I2/27501
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2014, Vol. 31 
