Bias Effects on the Growth of Helium-Containing Titanium Films
ZHANG Li-Ran1, DENG Ai-Hong1,2**, YANG Dong-Xu1, ZHOU Yu-Lu2, HOU Qing2, SHI Li-Qun3, ZHONG Yu-Rong4, WANG Bao-Yi4
1 Department of Physics, Sichuan University, Chengdu 610064 2 Key Laboratory of Radiation Physics and Technology of the Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064 3 Institue of Modern Physics, Fudan University, Shanghai 200433 4 Laboratory of Nuclear Analysis Technique, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049
Bias Effects on the Growth of Helium-Containing Titanium Films
ZHANG Li-Ran1, DENG Ai-Hong1,2**, YANG Dong-Xu1, ZHOU Yu-Lu2, HOU Qing2, SHI Li-Qun3, ZHONG Yu-Rong4, WANG Bao-Yi4
1 Department of Physics, Sichuan University, Chengdu 610064 2 Key Laboratory of Radiation Physics and Technology of the Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064 3 Institue of Modern Physics, Fudan University, Shanghai 200433 4 Laboratory of Nuclear Analysis Technique, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049
摘要Helium-containing titanium films were prepared on Si substrates with various biases applied by magnetron sputtering under stable He/Ar ambiance. Rutherford backscattering and elastic recoil detection analyses are used to measure the thickness of the He-Ti films and the helium depth profile, respectively. Experiments of x-ray diffraction and variable energy positron annihilation spectroscopy are carried out to investigate the microstructures of titanium films and the corresponding helium-related defects developed. The behavior of the implanted He, the microstructure of the He-Ti film and the formation of He-related defects all are affected by the substrate biases applied.
Abstract：Helium-containing titanium films were prepared on Si substrates with various biases applied by magnetron sputtering under stable He/Ar ambiance. Rutherford backscattering and elastic recoil detection analyses are used to measure the thickness of the He-Ti films and the helium depth profile, respectively. Experiments of x-ray diffraction and variable energy positron annihilation spectroscopy are carried out to investigate the microstructures of titanium films and the corresponding helium-related defects developed. The behavior of the implanted He, the microstructure of the He-Ti film and the formation of He-related defects all are affected by the substrate biases applied.
[1] Ullmaier H 1983 Radiat. Eff. 78 1
[2] Jager W, Lasser R, Schober T and Thomas G J 1983 Radiat. Eff. 78 165
[3] Trinkaus H and Singh B N 2003 J. Nucl. Mater. 323 229
[4] Cowgill D F 2005 Fusion Sci. Technol. 48 539
[5] Weave H T and Camp W J 1975 Phys. Rev. B 12 3054
[6] Rau R C and Ladd R L 1969 J. Appl. Phys. 40 2899
[7] Rajainmäki H, Linderoth S S, Hansen H E, Nieminen R M and Bentzon M D 1988 Phys. Rev. B 38 1087
[8] Pang H C, Luo S Z, Long X G, An Z, Liu N, Duan Y M, Wu C X, Yang B F, Wang P L and Zheng S X 2006 Chin. Phys. Lett. 23 3238
[9] Shi L Q, Liu C Z, Xu S L and Zhou Z Y 2004 Thin Solid Films 479 52
[10] Liu C Z, Shi L Q, Zhou Z Y, Hao X P, Wang B Y, Liu S and Wang L B 2007 J. Phys. D: Appl. Phys. 40 2150
[11] Liu C Z, Zhou Z Y, Shi L Q, Wang B Y, Hao X P and Zhao G Q 2007 Chin. Phys. Lett. 24 8
[12] Shultz P J and Lynn K G 1988 Rev. Mod. Phys. 60 701
[13] Zhou Y L, Hou Q, Wang J and Deng A H 2009 Chin. Phys. Lett. 26 090202
[14] Hou Q, Zhou Y L, Wang J and Deng A H 2010 J. Appl. Phys. 107 084901
2011, Vol. 28 
