PENG Cheng-Xiao1, WENG Hui-Min2, ZHANG Yang1, MA Xing-Ping1, YE Bang-Jiao2
1Institute of Microsystem Physics, Henan University, Kaifeng 4750042Modern Physics Department, University of Science and Technology of China, Hefei 230026
Influence of Dopants in ZnO Films on Defects
PENG Cheng-Xiao1, WENG Hui-Min2, ZHANG Yang1, MA Xing-Ping1, YE Bang-Jiao2
1Institute of Microsystem Physics, Henan University, Kaifeng 4750042Modern Physics Department, University of Science and Technology of China, Hefei 230026
The influence of dopants in ZnO films on defects is investigated by slow positron annihilation technique. The results show S that parameters meet SAl>Sun>SAg for Al-doped ZnO films, undoped and Ag-doped ZnO films. Zinc vacancies are found in all ZnO films with different dopants. According to S parameter and the same defect type, it can be induced that the zinc vacancy concentration is the highest in the Al-doped ZnO film, and it is the least in the Ag-doped ZnO film. When Al atoms are doped in the ZnO films grown on silicon substrates, Zn vacancies increase as compared to the undoped and Ag-doped ZnO films. The dopant concentration could determine the position of Fermi level in materials, while defect formation energy of zinc vacancy strongly depends on the position of Fermi level, so its concentration varies with dopant element and dopant concentration.
The influence of dopants in ZnO films on defects is investigated by slow positron annihilation technique. The results show S that parameters meet SAl>Sun>SAg for Al-doped ZnO films, undoped and Ag-doped ZnO films. Zinc vacancies are found in all ZnO films with different dopants. According to S parameter and the same defect type, it can be induced that the zinc vacancy concentration is the highest in the Al-doped ZnO film, and it is the least in the Ag-doped ZnO film. When Al atoms are doped in the ZnO films grown on silicon substrates, Zn vacancies increase as compared to the undoped and Ag-doped ZnO films. The dopant concentration could determine the position of Fermi level in materials, while defect formation energy of zinc vacancy strongly depends on the position of Fermi level, so its concentration varies with dopant element and dopant concentration.
(Defects and impurities: doping, implantation, distribution, concentration, etc.)
引用本文:
PENG Cheng-Xiao;WENG Hui-Min;ZHANG Yang;MA Xing-Ping;YE Bang-Jiao. Influence of Dopants in ZnO Films on Defects[J]. 中国物理快报, 2008, 25(12): 4442-4445.
PENG Cheng-Xiao, WENG Hui-Min, ZHANG Yang, MA Xing-Ping, YE Bang-Jiao. Influence of Dopants in ZnO Films on Defects. Chin. Phys. Lett., 2008, 25(12): 4442-4445.
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2008, Vol. 25 
