Photo- and Electro-Luminescence at 1.54µm from Er3+ in SiC:Er2O3 Films and Structures
YIN Yang1, RAN Guang-Zhao1**, ZHANG Bin2, QIN Guo-Gang1**
1School of Physics and the State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871 2Institute of Modern Physics, Fudan University, Shanghai 200433
Photo- and Electro-Luminescence at 1.54µm from Er3+ in SiC:Er2O3 Films and Structures
YIN Yang1, RAN Guang-Zhao1**, ZHANG Bin2, QIN Guo-Gang1**
1School of Physics and the State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871 2Institute of Modern Physics, Fudan University, Shanghai 200433
摘要SiC:Er2O3 films with different ratios of SiC to SiC:Er2O3 are deposited on p−type Si substrates by the magnetron co-sputtering technique, which was fully compatible with current Si processing technologies. Intense room temperature 1.54 µm photoluminescence (PL) from Er3+ ions in the SiC:Er2O3 films is observed and the PL intensity at 1.54 µm is enhanced by about 40 times with increasing Er concentration in the films from 0.8 to 22 at.% under both direct and indirect excitations. The 1.54 µm electroluminescence from the structure of indium tin oxide (ITO)/n+ −Si/SiC:Er2O3/p−Si with suitable ratios of SiC to SiC:Er2O3 is measured under forward biases.
Abstract：SiC:Er2O3 films with different ratios of SiC to SiC:Er2O3 are deposited on p−type Si substrates by the magnetron co-sputtering technique, which was fully compatible with current Si processing technologies. Intense room temperature 1.54 µm photoluminescence (PL) from Er3+ ions in the SiC:Er2O3 films is observed and the PL intensity at 1.54 µm is enhanced by about 40 times with increasing Er concentration in the films from 0.8 to 22 at.% under both direct and indirect excitations. The 1.54 µm electroluminescence from the structure of indium tin oxide (ITO)/n+ −Si/SiC:Er2O3/p−Si with suitable ratios of SiC to SiC:Er2O3 is measured under forward biases.
YIN Yang;RAN Guang-Zhao**;ZHANG Bin;QIN Guo-Gang**
. Photo- and Electro-Luminescence at 1.54µm from Er3+ in SiC:Er2O3 Films and Structures[J]. 中国物理快报, 2011, 28(7): 77801-077801.
YIN Yang, RAN Guang-Zhao**, ZHANG Bin, QIN Guo-Gang**
. Photo- and Electro-Luminescence at 1.54µm from Er3+ in SiC:Er2O3 Films and Structures. Chin. Phys. Lett., 2011, 28(7): 77801-077801.
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