Thermal Stability and Growth Behavior of Erbium Silicide Nanowires Self-Assembled on a Vicinal Si(001) Surface
DING Tao1,2, SONG Jun-Qiang1, LI Juan1, CAI Qun1**
1State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433 2Institute of Precision Optical Engineering, Department of Physics, Tongji University, Shanghai 200092
Thermal Stability and Growth Behavior of Erbium Silicide Nanowires Self-Assembled on a Vicinal Si(001) Surface
DING Tao1,2, SONG Jun-Qiang1, LI Juan1, CAI Qun1**
1State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433 2Institute of Precision Optical Engineering, Department of Physics, Tongji University, Shanghai 200092
摘要Erbium silicide nanowires are self-assembled on vicinal Si(001) substrates after electron beam evaporation and post annealing at 630°C In−situ scanning tunneling microscopy investigations manifest that the nanowires will successively shrink and transform into a nanoisland with annealing prolonged. Meanwhile, a structural transition from hexagonal AlB2 phase to tetragonal ThSi2 phase is revealed with high-resolution transmission electron microscopy. It is also found that the nanowires gradually expand to embed into the substrates during the growth process, which has much influence on the shape instability of nanowires. Additionally, a multiple deposition-annealing treatment is given as a novel growth method to strengthen the controlled fabrication of nanowires.
Abstract:Erbium silicide nanowires are self-assembled on vicinal Si(001) substrates after electron beam evaporation and post annealing at 630°C In−situ scanning tunneling microscopy investigations manifest that the nanowires will successively shrink and transform into a nanoisland with annealing prolonged. Meanwhile, a structural transition from hexagonal AlB2 phase to tetragonal ThSi2 phase is revealed with high-resolution transmission electron microscopy. It is also found that the nanowires gradually expand to embed into the substrates during the growth process, which has much influence on the shape instability of nanowires. Additionally, a multiple deposition-annealing treatment is given as a novel growth method to strengthen the controlled fabrication of nanowires.
DING Tao;SONG Jun-Qiang;LI Juan;CAI Qun**
. Thermal Stability and Growth Behavior of Erbium Silicide Nanowires Self-Assembled on a Vicinal Si(001) Surface[J]. 中国物理快报, 2011, 28(6): 66801-066801.
DING Tao, SONG Jun-Qiang, LI Juan, CAI Qun**
. Thermal Stability and Growth Behavior of Erbium Silicide Nanowires Self-Assembled on a Vicinal Si(001) Surface. Chin. Phys. Lett., 2011, 28(6): 66801-066801.
[1] Preinesberger C, Pruskil G, Becker S K, Dähnea M, Vyalikh D V, Molodtsov S L, Laubschat C and Schiller F 2005 Appl. Phys. Lett. 87 083107
[2] Kubo O, Shingaya Y, Aono M and Nakayama T 2006 Appl. Phys. Lett. 88 233117
[3] Preinesberger C, Vandré S, Kalka T and Dähne-Prietch M 1998 J. Phys. D Appl. Phys. 31 L43
[4] Liu B Z and Nogamia J 2003 J. Appl. Phys. 93 593
[5] Chen Y, Ohlberg D A A, Medeiros-Ribeiro G, Chang Y A and Williams R S 2000 Appl. Phys. Lett. 76 4004
[6] Chen Y, Ohlberg D A A, Medeiros-Ribeiro G, Chang Y A and Williams R S 2002 Appl. Phys. A 75 353
[7] Zhu Y, Zhou W, Ji T, Wang S, Hou X and Cai Q 2006 J. Appl. Phys. 100 114312
[8] Ding T, Wu Y, Song J, Li J, Huang H, Zou J and Cai Q 2011 Nanotechnology 22 245707
[9] Hens Z, Vanmaekelbergh D, Stoffels E J A and van Kempen H 2002 Phys. Rev. Lett. 88 236803
[10] Prado S T, Trallero-Giner C, Alcalde A M, Lopez-Richard V and Marques G E 2004 Phys. Rev. B 69 201310
[11] Cai Q, Yang J, Fu Y, Wang Y and Wang X 2002 Appl. Surf. Sci. 190 157
[12] Cai Q and Zhou W 2004 J. Phys. Condens. Matter 16 6835
[13] Zink-Allmang M 1999 Thin Solid Films 346 1
[14] Zuniga-Perez J, Munoz-Sanjose V, Palacios-Lidon E and Colchero J 2006 Appl. Phys. Lett. 88 261912
[15] Neugebauer J 2001 Phys. Stat. Sol. B 227 93
[16] Pradhan A, Ma N Y and Liu F 2004 Phys. Rev. B 70 193405
[17] Ma C L, Picozzi S, Wang X and Yang Z Q 2007 Eur. Phys. J. B 59 297
[18] Tsai W C, Hsu H C, Hsu H F and Chen L J 2005 Appl. Surf. Sci. 244 115
[19] Baglin J E E, d'Heurle F M and Petersson C S 1981 J. Appl. Phys. 52 2841
[20] Ji T, Song J, Zhou W and Cai Q 2007 Appl. Surf. Sci. 253 3184