Symmetry Breaking and Reversible Hydrogenation of Two-Dimensional Semiconductor Sn$_{2}$Bi *
Xuguang Wang1,2 , Bingyu Xia3 , Jian Gou1,2 , Peng Cheng1,2 , Yong Xu3 , Lan Chen1,2** , Kehui Wu1,2,4**
1 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China2 School of Physics, University of Chinese Academy of Sciences, Beijing 100049, China3 Department of Physics, Tsinghua University, Beijing 100084, China4 Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
Abstract ：The hydrogenation of two-dimensional (2D) systems can efficiently modify the physical and chemical properties of materials. Here we report a systematic study on the hydrogenation of 2D semiconductor Sn$_{2}$Bi on Si(111) by scanning tunneling microscopy experiments and first principle calculations. The unique butterfly-like and trench-like features were observed for single H adsorption sites and hydrogen-saturated surfaces respectively, from which the bridge-site adsorption geometry can be unambiguously determined. The structural model was further confirmed by the theoretical calculations, which is in good agreement with the experimental observation. In addition, the hydrogenation is found to vanish the flat band of Sn$_{2}$Bi and increase the band gap obviously.
收稿日期: 2020-04-23
出版日期: 2020-05-26
PACS:
68.35.bg
(Semiconductors)
68.37.Ef
(Scanning tunneling microscopy (including chemistry induced with STM))
引用本文:
. [J]. 中国物理快报, 2020, 37(6): 66802-.
链接本文:
http://cpl.iphy.ac.cn/CN/10.1088/0256-307X/37/68/066802
或
http://cpl.iphy.ac.cn/CN/Y2020/V37/I6/66802
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2020, Vol. 37 
