1Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 2School of Physics, University of Chinese Academy of Sciences, Beijing 100049, China 3Department of Physics, Tsinghua University, Beijing 100084, China 4Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
Abstract：The hydrogenation of two-dimensional (2D) systems can efficiently modify the physical and chemical properties of materials. Here we report a systematic study on the hydrogenation of 2D semiconductor Sn$_{2}$Bi on Si(111) by scanning tunneling microscopy experiments and first principle calculations. The unique butterfly-like and trench-like features were observed for single H adsorption sites and hydrogen-saturated surfaces respectively, from which the bridge-site adsorption geometry can be unambiguously determined. The structural model was further confirmed by the theoretical calculations, which is in good agreement with the experimental observation. In addition, the hydrogenation is found to vanish the flat band of Sn$_{2}$Bi and increase the band gap obviously.
Balog R, Jorgensen B, Nilsson L, Andersen M, Rienks E, Bianchi M, Fanetti M, Laegsgaard E, Baraldi A, Lizzit S, Sljivancanin Z, Besenbacher F, Hammer B, Pedersen T G, Hornekaer L 2010 Nat. Mater.9 315
2020, Vol. 37 
