The Impact of Shallow-Trench-Isolation Mechanical Stress on the Hysteresis Effect of Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effects
LUO Jie-Xin1**, CHEN Jing1, CHAI Zhan1, L Kai2, HE Wei-Wei2, YANG Yan3, WANG Xi1
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2Graduate University of Chinese Academy of Sciences, Beijing 100049 3Departments of Physics, Soochow University, Suzhou 215006
Abstract：The impact of shallow trench isolation (STI) mechanical stress on the hysteresis effect in the output characteristics is measured in partially depleted (PD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). We develop ID hysteresis, which is defined as the difference between ID versus VD forward sweep and reverse sweep. The fabricated devices show positive and negative peaks in ID hysteresis. The experimental results show that ID hysteresis declined as the STI mechanical stress increases. We also elaborate on the impact of STI mechanical stress on the ID hysteresis of PD SOI n-type MOSFETs.
. [J]. 中国物理快报, 2014, 31(12): 126601-126601.
LUO Jie-Xin, CHEN Jing, CHAI Zhan, L Kai, HE Wei-Wei, YANG Yan, WANG Xi. The Impact of Shallow-Trench-Isolation Mechanical Stress on the Hysteresis Effect of Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effects. Chin. Phys. Lett., 2014, 31(12): 126601-126601.
2014, Vol. 31 
