摘要Heterogeneous integration of crystalline Ge layers on cleaned and H-terminated Si(111) substrates are demonstrated by employing a combination of e-beam evaporation and solid phase epitaxy techniques. High-quality single crystalline Ge(111) layers on Si(111) substrates with a smooth Ge surface and an abrupt interface between Ge and Si are obtained. An XRD rocking curve scan of the Ge(111) diffraction peak shows a FWHM of only 260 arcsec for a 50-nm-thick Ge layer annealed at 600°C with a ramp−up rate of 20°C/s and a holding time of 1 min. The AFM images exhibit that the rms surface roughness of all the crystalline Ge layers are less than 2.1 nm.
Abstract：Heterogeneous integration of crystalline Ge layers on cleaned and H-terminated Si(111) substrates are demonstrated by employing a combination of e-beam evaporation and solid phase epitaxy techniques. High-quality single crystalline Ge(111) layers on Si(111) substrates with a smooth Ge surface and an abrupt interface between Ge and Si are obtained. An XRD rocking curve scan of the Ge(111) diffraction peak shows a FWHM of only 260 arcsec for a 50-nm-thick Ge layer annealed at 600°C with a ramp−up rate of 20°C/s and a holding time of 1 min. The AFM images exhibit that the rms surface roughness of all the crystalline Ge layers are less than 2.1 nm.
SUN Bing, CHANG Hu-Dong, LU Li, LIU Hong-Gang**, WU De-Xin. High-Quality Single Crystalline Ge(111) Growth on Si(111) Substrates by Solid Phase Epitaxy[J]. 中国物理快报, 2012, 29(3): 36102-036102.
SUN Bing, CHANG Hu-Dong, LU Li, LIU Hong-Gang, WU De-Xin. High-Quality Single Crystalline Ge(111) Growth on Si(111) Substrates by Solid Phase Epitaxy. Chin. Phys. Lett., 2012, 29(3): 36102-036102.
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