Generation of Nitrogen-Vacancy Centers in Diamond with Ion Implantation
CUI Jin-Ming1, CHEN Xiang-Dong1, FAN Le-Le2, GONG Zhao-Jun1, ZOU Chong-Wen2, SUN Fang-Wen1**, HAN Zheng-Fu1, GUO Guang-Can1
1Key Lab of Quantum Information, University of Science and Technology of China, Hefei 230026 2 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029
Generation of Nitrogen-Vacancy Centers in Diamond with Ion Implantation
CUI Jin-Ming1, CHEN Xiang-Dong1, FAN Le-Le2, GONG Zhao-Jun1, ZOU Chong-Wen2, SUN Fang-Wen1**, HAN Zheng-Fu1, GUO Guang-Can1
1Key Lab of Quantum Information, University of Science and Technology of China, Hefei 230026 2 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029
摘要Nitrogen-vacancy defect color centers are created in a high purity single crystal diamond by nitrogen-ion implantation. Both optical spectrum and optically detected magnetic resonance are measured for these artificial quantum emitters. Moreover, with a suitable mask, a lattice composed of nitrogen-vacancy centers is fabricated. Rabi oscillation driven by micro-waves is carried out to show the quality of the ion implantation and potential in quantum manipulation. Along with compatible standard lithography, such an implantation technique shows high potential in future to make structures with nitrogen-vacancy centers for diamond photonics and integrated photonic quantum chip.
Abstract：Nitrogen-vacancy defect color centers are created in a high purity single crystal diamond by nitrogen-ion implantation. Both optical spectrum and optically detected magnetic resonance are measured for these artificial quantum emitters. Moreover, with a suitable mask, a lattice composed of nitrogen-vacancy centers is fabricated. Rabi oscillation driven by micro-waves is carried out to show the quality of the ion implantation and potential in quantum manipulation. Along with compatible standard lithography, such an implantation technique shows high potential in future to make structures with nitrogen-vacancy centers for diamond photonics and integrated photonic quantum chip.
CUI Jin-Ming1, CHEN Xiang-Dong1, FAN Le-Le2, GONG Zhao-Jun1, ZOU Chong-Wen2, SUN Fang-Wen1**, HAN Zheng-Fu1, GUO Guang-Can1. Generation of Nitrogen-Vacancy Centers in Diamond with Ion Implantation[J]. 中国物理快报, 2012, 29(3): 36103-036103.
CUI Jin-Ming, CHEN Xiang-Dong, FAN Le-Le, GONG Zhao-Jun, ZOU Chong-Wen, SUN Fang-Wen, HAN Zheng-Fu, GUO Guang-Can. Generation of Nitrogen-Vacancy Centers in Diamond with Ion Implantation. Chin. Phys. Lett., 2012, 29(3): 36103-036103.
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