Effect of Stress in GaN/AlInGaN Grown on GaN Templates with Different Stress States
FENG Xiang-Xu** , LIU Nai-Xin, ZHANG Ning, WEI Tong-Bo, WANG Jun-Xi, LI Jin-Min
Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083
Abstract ：We clarify the effect of the stress in GaN templates on the subsequent AlInGaN deposition by simply growing 150 nm AlInGaN on a 30 μm GaN template (sample 1) prepared by hydride vapor phase epitaxy and a 2.3 μm thin control GaN template (sample 2) prepared by metalorganic chemical vapor deposition. X-ray diffraction and secondary iron mass spectroscopy measurements reveal the stress states (tensile stress and full relaxed for samples 1 and 2, respectively) and compositions (Al0.169 In0.01 Ga0.821 N, Al0.171 In0.006 Ga0.823 N for samples 1 and 2, respectively) of AlInGaN. By carefully eliminating other possible factor, as template surface roughness, it is concluded that different stress states of AlInGaN should stem from different stress states of GaN templates.
出版日期: 2014-04-24
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2014, Vol. 31 
