Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots
YANG Xiao-Guang1, YANG Tao1**, WANG Ke-Fan1, GU Yong-Xian1, JI Hai-Ming1, XU Peng-Fei1, NI Hai-Qiao2, NIU Zhi-Chuan2, WANG Xiao-Dong3, CHEN Yan-Ling3, WANG Zhan-Guo1
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2The State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 3Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots
YANG Xiao-Guang1, YANG Tao1**, WANG Ke-Fan1, GU Yong-Xian1, JI Hai-Ming1, XU Peng-Fei1, NI Hai-Qiao2, NIU Zhi-Chuan2, WANG Xiao-Dong3, CHEN Yan-Ling3, WANG Zhan-Guo1
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2The State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 3Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
摘要We report the fabrication of intermediate-band solar cells (IBSCs) based on quantum dots (QDs), which consists of a standard P-I-N structure with multilayer stacks of InAs/GaAs QDs in the I-layer. Compared with conventional GaAs single-junction solar cells, the IBSCs based on InAs/GaAs QDs show a broader photo-response spectrum (> 1330 nm), a higher short-circle current (about 53% increase) and a stronger radiation hardness. The results have important applications for realizing high efficiency solar cells with stronger radiation hardness.
Abstract：We report the fabrication of intermediate-band solar cells (IBSCs) based on quantum dots (QDs), which consists of a standard P-I-N structure with multilayer stacks of InAs/GaAs QDs in the I-layer. Compared with conventional GaAs single-junction solar cells, the IBSCs based on InAs/GaAs QDs show a broader photo-response spectrum (> 1330 nm), a higher short-circle current (about 53% increase) and a stronger radiation hardness. The results have important applications for realizing high efficiency solar cells with stronger radiation hardness.
(Nanoscale materials and structures: fabrication and characterization)
引用本文:
YANG Xiao-Guang;YANG Tao**;WANG Ke-Fan;GU Yong-Xian;JI Hai-Ming;XU Peng-Fei;NI Hai-Qiao;NIU Zhi-Chuan;WANG Xiao-Dong;CHEN Yan-Ling;WANG Zhan-Guo
. Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots[J]. 中国物理快报, 2011, 28(3): 38401-038401.
YANG Xiao-Guang, YANG Tao**, WANG Ke-Fan, GU Yong-Xian, JI Hai-Ming, XU Peng-Fei, NI Hai-Qiao, NIU Zhi-Chuan, WANG Xiao-Dong, CHEN Yan-Ling, WANG Zhan-Guo
. Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots. Chin. Phys. Lett., 2011, 28(3): 38401-038401.
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