2011, Vol. 28(3): 38401-038401    DOI: 10.1088/0256-307X/28/3/038401
	Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots
	YANG Xiao-Guang1, YANG Tao1**, WANG Ke-Fan1, GU Yong-Xian1, JI Hai-Ming1, XU Peng-Fei1, NI Hai-Qiao2, NIU Zhi-Chuan2, WANG Xiao-Dong3, CHEN Yan-Ling3, WANG Zhan-Guo1
	1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2The State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 3Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
	收稿日期 2010-10-12  修回日期 1900-01-01
	Supporting info
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