Thermal Stability of Reliable Polycrystalline Zirconium Oxide for Nonvolatile Memory Application
ZHOU Peng1, LI Jing2, CHEN Liang-Yao2, TANG Ting-Ao1, LIN Yin-Yin1
1School of Microelectronics and State Key Lab of ASIC and System, Fudan University, Shanghai 2004332Department of Optical Science and Engineering, Fudan University, Shanghai 200433
Thermal Stability of Reliable Polycrystalline Zirconium Oxide for Nonvolatile Memory Application
ZHOU Peng1, LI Jing2, CHEN Liang-Yao2, TANG Ting-Ao1, LIN Yin-Yin1
1School of Microelectronics and State Key Lab of ASIC and System, Fudan University, Shanghai 2004332Department of Optical Science and Engineering, Fudan University, Shanghai 200433
摘要Thermal stability of resistive switching of stoichiometric zirconium oxide thin films is investigated for high yielding nonvolatile memory application. The Al/ZrO2/Al cell fabricated in the conventional device process shows highly reliable switching behaviour between two distinct stable resistance states. The retention capabilities are also tested under various conditions and temperatures. The excellent performance of Al/ZrO2/Al cell can be explained by assuming that anode/ZrO2 interface exists and by conducting filament forming/rupture mechanism. The device failure is illustrated in terms of permanent conducting filaments formation.
Abstract：Thermal stability of resistive switching of stoichiometric zirconium oxide thin films is investigated for high yielding nonvolatile memory application. The Al/ZrO2/Al cell fabricated in the conventional device process shows highly reliable switching behaviour between two distinct stable resistance states. The retention capabilities are also tested under various conditions and temperatures. The excellent performance of Al/ZrO2/Al cell can be explained by assuming that anode/ZrO2 interface exists and by conducting filament forming/rupture mechanism. The device failure is illustrated in terms of permanent conducting filaments formation.
[1] Jeong D S, Schroeder H and Waser R 2006 Appl. Phys.Lett. 89 082906 [2] Seo S, Lee M J, Seo D H, Jeoung E J, Suh D S, Joung Y S,Yoo I K, Hwang I R, Kim S H, Byun I S, Kim J S, Choi J S and Park BH 2004 Appl. Phys. Lett 85 5655 [3] Choi B J, Jeong D S, Kim S K, Choi S, Oh J H, Rohde C, KimH J, Hwang C S, Szot K, Waser R, Reichenberg B and Tiedke S 2005 J. Appl. Phys. 98 033715 [4] Kim K M, Choi B J, Koo B W, Choi S, Jeong D S and Hwang CS 2006 Electron. Solid-State Lett. 9 G343 [5] Chen A, Haddad S, Wu Y C, Fang T N, Lan Z D, Avanzino S,Pangrle S, Buynoski M, Rathor M, Cai W, Tripsas N, Bill C,VanBuskirk M and Taguchi M 2005 International Electron DevicesMeeting Tech. Digest (Washington, DC) p 746 [6] Lee D S, Seong D J, Choi H J, Dong R, Xiang W, Oh S K,Pyun M B, Seo S O, Heo S H, Jo M S, Hwang D K, Park H K, Chang M,Hasan M and Hwang H S 2006 International Electron DevicesMeeting Tech. Digest (San Francisco) [7] Wetzig K and Schneider C M 2003 Metal Based ThinFilms for Electronics (New York: Wiley) p 251 [8] Wu X, Zhou P, Li J, Chen L Y, Lv H B, Lin Y Y and Tang T A2007 Appl. Phys. Lett. 90 183507 [9] Samsonov G V 1982 The Oxide Handbook 2nd edn(IFI/Plenum Data Company) [10] Fang T N, Kaza S, Haddad S, Chen A, Wu Y C, Lan Z D,Avanzino S, Liao D, Gopalan C, Sara M, Buynoski M, Lin Y, Marrian C,Bill C, VanBuskirk M and Taguchi M 2006 International ElectronDevices Meeting Tech. Digest (San Francisco) [11] Kim K M, Choi B J, Shin Y C, Choi S and Hwang C S 2007 Appl. Phys. Lett. 91 012907 [12] Kim K M, Choi B J and Hwang C S 2007 Appl. Phys.Lett. 90 242906 [13] Inoue I H, Yasuda S, Akinaga H and Takagi1 H 2007arXiv:cond-mat /0702564v1 [14] Szot K, Speier W, Bihlmayer G and Waser R 2006 Nature Mater. 5 312 [15] Yang C, Wu C, Wu C Y, Lee T, Yang F, Hu C and Tseng T2007 IEEE Electron. Device Lett. 28 366
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