Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001)
FAN Ya-Ming1, ZHANG Xing-Wang1,2, YOU Jing-Bi1, YING Jie1, TAN Hai-Ren1, CHEN Nuo-Fu1
1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy Sciences, Beijing 1000832Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, Hubei University, Wuhan 430062
Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001)
FAN Ya-Ming1, ZHANG Xing-Wang1,2, YOU Jing-Bi1, YING Jie1, TAN Hai-Ren1, CHEN Nuo-Fu1
1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy Sciences, Beijing 1000832Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, Hubei University, Wuhan 430062
摘要Cubic boron nitride (c-BN) films were deposited on Si(001) substrates in an ion beam assisted deposition (IBAD) system under various conditions, and the growth parameter spaces and optical properties of c-BN films have been investigated systematically. The results indicate that suitable ion bombardment is necessary for the growth of c-BN films, and a well defined parameter space can be established by using the P/a-parameter. The refractive index of BN films keeps a constant of 1.8 for the c-BN content lower than 50%, while for c-BN films with higher cubic phase the refractive index increases with the c-BN content from 1.8 at χc=50% to 2.1 at χc=90%. Furthermore, the relationship between n and ρ for BN films can be described by the Anderson-Schreiber equation, and the overlap field parameter γ is determined to be 2.05.
Abstract：Cubic boron nitride (c-BN) films were deposited on Si(001) substrates in an ion beam assisted deposition (IBAD) system under various conditions, and the growth parameter spaces and optical properties of c-BN films have been investigated systematically. The results indicate that suitable ion bombardment is necessary for the growth of c-BN films, and a well defined parameter space can be established by using the P/a-parameter. The refractive index of BN films keeps a constant of 1.8 for the c-BN content lower than 50%, while for c-BN films with higher cubic phase the refractive index increases with the c-BN content from 1.8 at χc=50% to 2.1 at χc=90%. Furthermore, the relationship between n and ρ for BN films can be described by the Anderson-Schreiber equation, and the overlap field parameter γ is determined to be 2.05.
(Ion and electron beam-assisted deposition; ion plating)
引用本文:
FAN Ya-Ming;ZHANG Xing-Wang;YOU Jing-Bi;YING Jie;TAN Hai-Ren;CHEN Nuo-Fu. Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001)[J]. 中国物理快报, 2009, 26(5): 56801-056801.
FAN Ya-Ming, ZHANG Xing-Wang, YOU Jing-Bi, YING Jie, TAN Hai-Ren, CHEN Nuo-Fu. Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001). Chin. Phys. Lett., 2009, 26(5): 56801-056801.
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2009, Vol. 26 
