A Practical Guide for X-Ray Diffraction Characterization of Ga(Al, In)N Alloys
ZHOU Sheng-Qiang, WU Ming-Fang, YAO Shu-De
School of Physics, Peking University, Beijing 100871
A Practical Guide for X-Ray Diffraction Characterization of Ga(Al, In)N Alloys
ZHOU Sheng-Qiang;WU Ming-Fang;YAO Shu-De
School of Physics, Peking University, Beijing 100871
关键词 ：
61.10.Nz ,
61.66.Fn ,
68.55.Nq
Abstract ： Ga(In, Al)N alloys are used as an active layer or cladding layer in light emitting diodes and laser diodes. x-ray diffraction is extensively used to evaluate the crystalline quality, the chemical composition and the residual strain in Ga(Al,In)N thin films, which directly determine the emission wavelength and the device performance. Due to the minor mismatch in lattice parameters between Ga(Al, In)N alloy and a GaN virtual substrate, x-ray diffraction comes to a problem to separate the signal from Ga(Al,In)N alloy and GaN. We give a detailed comparison on different diffraction planes. In order to balance the intensity and peak separation between Ga(Al,In)N alloy and GaN, (0004) and $(10\bar 15)$ planes make the best choice for symmetric scan and asymmetric scan, respectively.
Key words ：
61.10.Nz
61.66.Fn
68.55.Nq
出版日期: 2005-08-01
引用本文:
ZHOU Sheng-Qiang;WU Ming-Fang;YAO Shu-De. A Practical Guide for X-Ray Diffraction Characterization of Ga(Al, In)N Alloys[J]. 中国物理快报, 2005, 22(8): 1984-1986.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I8/1984
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