Ultra-Thin Silicon Carbon Nitride Film: a Promising Protective Coating for Read/Write Heads in Magnetic Storage Devices
GAO Peng1, XU Jun2, DING Wan-Yu2, DONG Chuang2
1Faculty of Materials and Metallurgical Engineering, Kunming University of Science and Technology, Kunming 6500932State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024
Ultra-Thin Silicon Carbon Nitride Film: a Promising Protective Coating for Read/Write Heads in Magnetic Storage Devices
GAO Peng1, XU Jun2, DING Wan-Yu2, DONG Chuang2
1Faculty of Materials and Metallurgical Engineering, Kunming University of Science and Technology, Kunming 6500932State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024
摘要Ultra-thin amorphous Si-C-N films, down to 2nm, have been synthesized by MW-ECR plasma enhanced unbalanced magnetron sputtering. The friction coefficient of the film is only 0.11, determined in dry friction tests against the GCr15 ball at a load of 400mN for 20min. The films exhibit good protection against corrosion when they are immersed in a more severe corrosion environment of 0.1mol/L oxalic acid for 12h compared to the usual conditions (0.05mol/L, 4min) used in current computer industries. These good properties can be attributed to the smooth, dense and pore free structure of the film. These indicate that the Si-C-N film synthesized by the present technique may be a promising protective coating for read/write heads and other magnetic storage devices.
Abstract：Ultra-thin amorphous Si-C-N films, down to 2nm, have been synthesized by MW-ECR plasma enhanced unbalanced magnetron sputtering. The friction coefficient of the film is only 0.11, determined in dry friction tests against the GCr15 ball at a load of 400mN for 20min. The films exhibit good protection against corrosion when they are immersed in a more severe corrosion environment of 0.1mol/L oxalic acid for 12h compared to the usual conditions (0.05mol/L, 4min) used in current computer industries. These good properties can be attributed to the smooth, dense and pore free structure of the film. These indicate that the Si-C-N film synthesized by the present technique may be a promising protective coating for read/write heads and other magnetic storage devices.
[1] Wood R J 2002 IEEE Trans. Magn. 38 1711 [2] Waltman R J, Zhang H, Khurshudov A, Pocker D, Karplus M A,York B, Xiao Q F, Zadoori H, Thiele J U and Tyndall G W 2002 Tribol. Lett. 12 51 [3] Li D J and Chung Y W 2003 IEEE Trans. Magn. 39765 [4] Chen C Y, Fong W, Bogy D B and Bhatia C S 2000 Trib.Lett. 8 25 [5] Ferrari A C, Libassi A, Tanner BK, Stolojan V, Yuan J,Brown L M, Rodil S E, Kleinsorge B and Robertson J 2000 Phys.Rev. B 62 11089 [6] Zhang B, Ying J and Wei B 1999 Data Storage 125 [7] Brown I G 1998 Ann. Rev. Mater. Sci. 28 243 [8] Yen B K, White R L, Waltman R J, Mate C M, Sonobe. Y andMarchon B 2003 J. Appl. Phys. 93 8704 [9] Wang C Z, Wang E G and Dai Q 1998 J. Appl. Phys. 83 1975 [10] Lowther J E 1999 Phys. Rev. B 60 11943 [11] Badzian A 2002 J. Am. Ceram. Soc. 85 16 [12] Betranhandy E, Capou L, Matar S F and El-Kfoury C 2004 Solid State Sci. 6 315 [13] Chen L C, Chen K H, Wei S L, Kichambare P D, Wu J J, Lu TR and Kuo C T 1999 Thin Solid Films 355--356 112 [14] Xu J, Deng X L, Lu W Q and Ma T C 2001 Thin SolidFilms 390 107 [15] Xu J, Ma T C, Zhang J L, Deng X L, Zhang W F and PerroneA 2002 Int. J. Mod. Phys. B 16 1120 [16] Li D J, Guruz M U, Bhatia C S and Chung Y W 2002 Appl. Phys. Lett. 81 1113 [17] Behkam B, Yang Y and Asheghi M 2005 Int. J. Heat.Mass. Transfer 48 2023 [18] Bhushan B 1999 Diamond Relat. Mater. 8 1985 [19] Lu Y F, Ren Z M, Chong T C, Cheong B A, Pang S I, Wang JP and Li K 1999 J. Appl. Phys. 86 4954 [20] Normand F L, Hommet J, Szorenyi T, Fuchs C and FogarassyE 2001 Phys. Rev. B 64 235416 [21] Ronning C, Feldermann H, Merk P, Hofsaaa H, Reinke P andThiele J U 1998 Phys. Rev. B 58 2207 [22] Bendeddouche A, Berjoan R, Beche T, Mejean T M, Schamm S,Serin V, Taillades G, Pradel A and Hillel R 1997 J. Appl.Phys. 81 6147 [23] Gao Y, Wei J, Zhang D H, Mo Z Q, Hing P and Shi X 2000 Thin Solid Films 377--378 562
2009, Vol. 26 
