Non-Uniformity of Ion Implantation in Direct-Current Plasma Immersion Ion Implantation
LIU Cheng-Sen1, WANG De-Zhen2, FAN Yu-Jia1, ZHANG Nan1, GUAN Li1, YAO Yuan1
1College of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029 2State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023
Non-Uniformity of Ion Implantation in Direct-Current Plasma Immersion Ion Implantation
LIU Cheng-Sen1, WANG De-Zhen2, FAN Yu-Jia1, ZHANG Nan1, GUAN Li1, YAO Yuan1
1College of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029 2State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023
A particle-in-cell simulation is developed to study dc plasma immersion ion implantation. Particular attention is paid to the influence of the voltage applied to the target on the ion path, and the ion flux distribution on the target surface. It is found that the potential near the aperture within the plasma region is not the plasma potential, and is impacted by the voltage applied to the implanted target. A curved equipotential contour expands into the plasma region through the aperture and the extent of the expansion depends on the voltage. Ions accelerated by the electric field in the sheath form a beam shape and a flux distribution on the target surface, which are strongly dependent on the applied voltage. The results of the simulations demonstrate the formation mechanism of the grid-shadow effect, which is in agreement with the result observed experimentally.
A particle-in-cell simulation is developed to study dc plasma immersion ion implantation. Particular attention is paid to the influence of the voltage applied to the target on the ion path, and the ion flux distribution on the target surface. It is found that the potential near the aperture within the plasma region is not the plasma potential, and is impacted by the voltage applied to the implanted target. A curved equipotential contour expands into the plasma region through the aperture and the extent of the expansion depends on the voltage. Ions accelerated by the electric field in the sheath form a beam shape and a flux distribution on the target surface, which are strongly dependent on the applied voltage. The results of the simulations demonstrate the formation mechanism of the grid-shadow effect, which is in agreement with the result observed experimentally.
LIU Cheng-Sen;WANG De-Zhen;FAN Yu-Jia;ZHANG Nan;GUAN Li;YAO Yuan. Non-Uniformity of Ion Implantation in Direct-Current Plasma Immersion Ion Implantation[J]. 中国物理快报, 2010, 27(7): 75201-075201.
LIU Cheng-Sen, WANG De-Zhen, FAN Yu-Jia, ZHANG Nan, GUAN Li, YAO Yuan. Non-Uniformity of Ion Implantation in Direct-Current Plasma Immersion Ion Implantation. Chin. Phys. Lett., 2010, 27(7): 75201-075201.
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2010, Vol. 27 
