摘要We develop a physics-based charge-control InP double heterojunction bipolar transistor model including three important effects: current blocking, mobile-charge modulation of the base-collector capacitance and velocity-field modulation in the transit time. The bias-dependent base-collector depletion charge is obtained analytically, which takes into account the mobile-charge modulation. Then, a measurement based voltage-dependent transit time formulation is implemented. As aresult, over a wide range of biases, the developed model shows good agreement between the modeled and measured S-parameters and cutoff frequency. Also, the model considering current blocking effect demonstrates more accurate prediction of the output characteristics than conventional vertical bipolar inter company results.
Abstract：We develop a physics-based charge-control InP double heterojunction bipolar transistor model including three important effects: current blocking, mobile-charge modulation of the base-collector capacitance and velocity-field modulation in the transit time. The bias-dependent base-collector depletion charge is obtained analytically, which takes into account the mobile-charge modulation. Then, a measurement based voltage-dependent transit time formulation is implemented. As aresult, over a wide range of biases, the developed model shows good agreement between the modeled and measured S-parameters and cutoff frequency. Also, the model considering current blocking effect demonstrates more accurate prediction of the output characteristics than conventional vertical bipolar inter company results.
GE Ji;JIN Zhi;SU Yong-Bo;CHENG Wei;WANG Xian-Tai;CHEN Gao-Peng;LIU Xin-Yu. A Physics-Based Charge-Control Model for InP DHBT Including Current-Blocking Effect[J]. 中国物理快报, 2009, 26(7): 77302-077302.
GE Ji, JIN Zhi, SU Yong-Bo, CHENG Wei, WANG Xian-Tai, CHEN Gao-Peng, LIU Xin-Yu. A Physics-Based Charge-Control Model for InP DHBT Including Current-Blocking Effect. Chin. Phys. Lett., 2009, 26(7): 77302-077302.
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