摘要N-type LaAlO3-δ thin films are epitaxially grown on p-type Si substrates. An enhancement mode field-effect transistor is constructed with oxygen deficient LaAlO3-δ as the source and drain, p-type Si as the semiconducting channel, and SiO2 as the gate insulator, respectively. The typical current-voltage behavior with field-effect transistor characteristic is observed. The ON/OFF ratio reaches 14at a gate voltage of 10V, the field-effect mobility is 10cm2/V・s at a gate voltage of 2V, and the transconductance is 5×10-6 A/V at a drain-source voltage of 0.8V at room temperature. The present field-effect transistor device demonstrates the possibility of realizing the integration of multifunctional perovskite oxides and the conventional Si semiconductor.
Abstract：N-type LaAlO3-δ thin films are epitaxially grown on p-type Si substrates. An enhancement mode field-effect transistor is constructed with oxygen deficient LaAlO3-δ as the source and drain, p-type Si as the semiconducting channel, and SiO2 as the gate insulator, respectively. The typical current-voltage behavior with field-effect transistor characteristic is observed. The ON/OFF ratio reaches 14at a gate voltage of 10V, the field-effect mobility is 10cm2/V・s at a gate voltage of 2V, and the transconductance is 5×10-6 A/V at a drain-source voltage of 0.8V at room temperature. The present field-effect transistor device demonstrates the possibility of realizing the integration of multifunctional perovskite oxides and the conventional Si semiconductor.
YANG Fang;JIN Kui-Juan;LU Hui-Bin;HE Meng;YANG Guo-Zhen. Field-Effect Transistor Based on Si with LaAlO3-δ as the Source and Drain[J]. 中国物理快报, 2009, 26(7): 77301-077301.
YANG Fang, JIN Kui-Juan, LU Hui-Bin, HE Meng, YANG Guo-Zhen. Field-Effect Transistor Based on Si with LaAlO3-δ as the Source and Drain. Chin. Phys. Lett., 2009, 26(7): 77301-077301.
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2009, Vol. 26 
