Manipulative Properties of Asymmetric Double Quantum Dots via Laser and Gate Voltage
ZHAO Shun-Cai, LIU Zheng-Dong
School of Materials Science and Engineering, Nanchang University, Nanchang 330031Engineering Research Center for Nanotechnology, Nanchang University,Nanchang 330047Institute of Modern Physics, Nanchang University, Nanchang 330031
Manipulative Properties of Asymmetric Double Quantum Dots via Laser and Gate Voltage
ZHAO Shun-Cai, LIU Zheng-Dong
School of Materials Science and Engineering, Nanchang University, Nanchang 330031Engineering Research Center for Nanotechnology, Nanchang University,Nanchang 330047Institute of Modern Physics, Nanchang University, Nanchang 330031
摘要We present a density matrix approach for the theoretical description of an asymmetric double quantum dot (QD) system. The results show that the properties of gain, absorption and dispersion of the double QD system, the population of the state with one hole in one dot and an electron in another dot transferred by tunneling can be manipulated by a laser pulse or gate voltage. Our scheme may demonstrate the possibility of electro-optical manipulation of quantum systems.
Abstract:We present a density matrix approach for the theoretical description of an asymmetric double quantum dot (QD) system. The results show that the properties of gain, absorption and dispersion of the double QD system, the population of the state with one hole in one dot and an electron in another dot transferred by tunneling can be manipulated by a laser pulse or gate voltage. Our scheme may demonstrate the possibility of electro-optical manipulation of quantum systems.
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