Fabrication of Low-Density Long-Wavelength InAs Quantum Dots using a Formation-Dissolution-Regrowth Method
ZHANG Shi-Zhu, YE Xiao-Ling** , XU Bo, LIU Shu-Man, ZHOU Wen-Fei, WANG Zhan-Guo
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract ：Low-density (～ 109 cm?2 ), long-wavelength (more than 1300 nm at room temperature) InAs/GaAs quantum dots (QDs) with only 1.75-mono-layer (ML) InAs deposition were achieved by using a formation-dissolution-regrowth method. Firstly, small high-density InAs QDs were formed at 490°C, then the substrate temperature was ramped up to 530°C, and another 0.2 ML InAs was added. After this process, the density of the InAs QDs became much lower, and their size became much larger. The full width at half maximum of the photoluminescence peak of the low density, long-wavelength InAs QDs was as small as 27.5 meV.
收稿日期: 2013-04-09
出版日期: 2013-11-21
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2013, Vol. 30 
