InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition
LUO Shuai, JI Hai-Ming, GAO Feng, YANG Xiao-Guang, LIANG Ping, ZHAO Ling-Juan, YANG Tao**
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract ：We demonstrate InAs/InGaAsP/InP quantum dot (QD) lasers grown by metalorganic chemical vapor deposition. The active region of the lasers consists of five layers of InAs QDs. Ridge waveguide lasers with 6 μm width have been fabricated by standard optical lithography and wet etching. Under continuous wave operation at room temperature, a low threshold current density of 447 A/cm2 per QD layer is achieved for a QD laser with a cavity length of 2 mm. Moreover, the lasing redshifts from 1.61 μm to 1.645 μm as the cavity length increases from 1.5 mm to 4 mm. A high characteristic temperature of up to 88 K is obtained in the temperature range between 10°C and 40°C.
收稿日期: 2013-02-22
出版日期: 2013-05-31
引用本文:
. [J]. 中国物理快报, 2013, 30(6): 68101-068101.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/30/6/068101
或
https://cpl.iphy.ac.cn/CN/Y2013/V30/I6/68101
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2013, Vol. 30 
