Capping-Barrier Layer Effect on Quantum Dot Optoelectronic Characteristics
A. Rostami1,2**, H. Rasooli Saghai2, H. Baghban1,2, N. Sadoogi1, Y. Seyfinejad3
1Photonic and Nanocrystal Research Lab (PNRL), Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz 51664, Iran 2School of Engineering Emerging Technologies, University of Tabriz, Tabriz 51664, Iran 3Department of Electrical Engineering, Islamic Azad University, Tabriz Branch, Sardrud Center Tabriz, Iran
Capping-Barrier Layer Effect on Quantum Dot Optoelectronic Characteristics
A. Rostami1,2**, H. Rasooli Saghai2, H. Baghban1,2, N. Sadoogi1, Y. Seyfinejad3
1Photonic and Nanocrystal Research Lab (PNRL), Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz 51664, Iran 2School of Engineering Emerging Technologies, University of Tabriz, Tabriz 51664, Iran 3Department of Electrical Engineering, Islamic Azad University, Tabriz Branch, Sardrud Center Tabriz, Iran
摘要We present a study of capping-barrier layer (CBL) effect on electro-optical properties of box- and spherical-shaped quantum dots as well as of the electronic transport of a QDs-array. It is shown that increasing the CBL-width leads to a considerable enhancement in third-order optical nonlinear susceptibilities (14 times in the quadratic electro-optic effect, 31 times for ω=ω0/3 and 14 times for ω=ω0 in the third harmonic generation). The capping-barrier layer thus can be employed as a degree of freedom in engineering the electro-optical specifications of quantum-dot-based devices.
Abstract：We present a study of capping-barrier layer (CBL) effect on electro-optical properties of box- and spherical-shaped quantum dots as well as of the electronic transport of a QDs-array. It is shown that increasing the CBL-width leads to a considerable enhancement in third-order optical nonlinear susceptibilities (14 times in the quadratic electro-optic effect, 31 times for ω=ω0/3 and 14 times for ω=ω0 in the third harmonic generation). The capping-barrier layer thus can be employed as a degree of freedom in engineering the electro-optical specifications of quantum-dot-based devices.
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2010, Vol. 27 
