中国物理快报  2016, Vol. 33 Issue (04): 44207-044207    DOI: 10.1088/0256-307X/33/4/044207
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Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates
Ting Wang1**, Hui-Yun Liu2, Jian-Jun Zhang1**
1Institute of Physics, Chinese Academy of Sciences, Beijing 100190
2Department of Electronic & Electrical Engineering, University College London, Torrington Place WC1E 7JE, United Kingdom