摘要Self-assembled quantum dots capping with a GaAs/Gasb combined strain-reduced layer (CSRL) are grown by MBE. Their structural and optical properties are investigated by AFM and photoluminescence (PL). PL measurements have shown that stronger emission about 1.3μm can be obtained by Sb irradiation and capping QDs with 3ML GaAs/2ML GaSb CSRL at room temperature. The full width at half maximum (FWHM) of the PL spectrum is about 20.2meV (19.9meV) at room temperature (20K), indicating that the QDs have high uniform, The result of FWHM is much better than the recently reported result, which is due to the fact that lower QD growth rate and growth interruption after the QDs deposition are adopted in our experiments.
Abstract：Self-assembled quantum dots capping with a GaAs/Gasb combined strain-reduced layer (CSRL) are grown by MBE. Their structural and optical properties are investigated by AFM and photoluminescence (PL). PL measurements have shown that stronger emission about 1.3μm can be obtained by Sb irradiation and capping QDs with 3ML GaAs/2ML GaSb CSRL at room temperature. The full width at half maximum (FWHM) of the PL spectrum is about 20.2meV (19.9meV) at room temperature (20K), indicating that the QDs have high uniform, The result of FWHM is much better than the recently reported result, which is due to the fact that lower QD growth rate and growth interruption after the QDs deposition are adopted in our experiments.
[1] Yang T, Tatebayashi J, Tsukamoto S, Nishioka M and Arakawa Y 2004 Appl. Phys. Lett. 84 2817 [2] Pan D, Towe E and Kennerly S 2000 Appl. Phys. Lett. 763301 [3] Tatebayashi J, Hatori N, Ishida M, Ebe H, Sugawara M, Arakawa Y,Sudo H and Kuramata A 2005 Appl. Phys. Lett. 86 053107 [4] Chen Z, Baklenov O, Kim E, Mukhametzhanov I, Tie J, Madhukar A, YeZ and Campbell J C 2001 J. Appl. Phys. 89 4558 [5] Madhukar A, Ramachandran T R, Konkar A, Mukhametzhanov I, Yu W andChen P 1998 Appl. Surf. Sci. 123/124 266 [6] Kaizu T, Takahasi M, Yamaguchi K and Mizuki J 2007 J. CrystalGrowth 301-302 248 [7] Riel B J, Hinzer K, Moisa S, Fraser J, Finnie P, Piercy P, Fafard Sand Wasilewski Z R 2002 J. Crystal Growth 236 145 [8] Nishi K, Saito H, Sugou S and Lee J S 1999 Appl. Phys.Lett. 74 1111 [9] Lin C H, Pai W W, Chang F Y and Lin H H 2007 Appl. Phys.Lett. 90 063102 [10] Amano T, Sugaya T, Yamauchi S and Komori K 2006 J. CrystalGrowth 295 162 [11] Amano T, Yamauchi S, Sugaya T and Komori K 2006 Appl. Phys.Lett. 88 261110 [12] Ripalda J M, Alonso-Alvarez D, Alen B, Taboada A G, Garcia J M,Gonzalez Y and Gonzalez L 2007 Appl. Phys. Lett. 91 012111 [13] Guimard D, Nishioka M, Tsukamoto S and Arakawa Y 2007 J.Crystal Growth 298 548 [14] Matsuura T, Miyamoto T, Ohta M, Matsui Y, Furuhata T and Koyama F2005 J. Crystal Growth 278 51 [15] Yamaguchi K and Kanto T 2005 J. Crystal Growth 275e2269 [16] Matsuura T, Miyamoto T, Kageyamay T, Ohta M, Matsui Y, Furuhata Tand Koyama F 2006 Jpn. J. Appl. Phys. 43 L605 [17] Shimizu H and Saravanan S 2006 Appl. Phys. Lett. 88041119 [18] Guimard D, Tsukamoto S, Nishilka M and Arakawa Y 2006 Appl.Phys. Lett. 89 083116 [19] Costantini G, Rastelli A, Manzano C, Acosta-Diaz P, Songmuang R,Katsaros G, Schmidt O G and Kern K 2006 Phys. Rev. Lett. 96 226106 [20] Garc\'\i a J M, Medeiros-Ribeiro G, Schmidt K, Ngo T, Feng JL, Lorke A, Kotthaus J and Petroff P M 1997 Appl. Phys. Lett. 71 2014 [21] Joyce P B, Krzyzewski T J, Bell G R, Jones T S, Malik S, Childs Dand Murray R 2001 J. Crystal Growth 227-228 1000 [22] Convertino A, Cerri L, Leo G and Viticoli S 2004 J. CrystalGrowth 261 458 [23] Varshni Y P 1967 Physica 34 149 [24] Mi Z and Bhattacharyaa P 2005 J. Appl. Phys. 98 023510
2008, Vol. 25 
