1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049
Abstract：Large-signal modulation capability, as an important performance indicator, is directly related to the high-speed optical communication technology involved. We experimentally and theoretically investigate the large-signal modulation characteristics of the simultaneous ground-state (GS) and the excited-state (ES) lasing in InAs/GaAs quantum dot laser diodes. The large-signal modulation capability of total light intensity in the transition regime from GS lasing to two-state lasing is unchanged as the bias-current increases. However, GS and ES large-signal eye diagrams show obvious variations during the transition. Relaxation oscillations and large-signal eye diagrams for GS, ES, and total light intensities are numerically simulated and analyzed in detail by using a rate-equation model. The findings show that a complementary relationship between the light intensities for GS and ES lasing exists in both the transition regime and the two-state lasing regime, leading to a much smaller overshooting power and a shorter settling time for the total light intensity. Therefore, the eye diagrams of GS or ES lasing are diffuse whereas those of total light intensity are constant as the bias-current increases in the transition regime.
2016, Vol. 33 
