Influence of Concentration of Vanadium in Zinc Oxide on Structural and Optical Properties with Lower Concentration
WANG Li-Wei1,2,3, XU Zheng1, MENG Li-Jian2,3, Vasco Teixeira3, SONG Shi-Geng4, XU Xu-Rong1
1Institute of Optoelectronics Technology, and Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Beijing 1000442Departamento de Fisica, Instituto Superior de Engenharia do Porto, Rua Dr. Antonio Bernardino de Almeida 431, 4200-072 Porto, Portugal3Centro de Fisica, Universidade do Minho, Campus de Azurem, 4800-058 Guimaraes, Portugal4Thin Film Center, University of Paisley, Paisley PA1 2BE, Scotland
Influence of Concentration of Vanadium in Zinc Oxide on Structural and Optical Properties with Lower Concentration
WANG Li-Wei1,2,3, XU Zheng1, MENG Li-Jian2,3, Vasco Teixeira3, SONG Shi-Geng4, XU Xu-Rong1
1Institute of Optoelectronics Technology, and Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Beijing 1000442Departamento de Fisica, Instituto Superior de Engenharia do Porto, Rua Dr. Antonio Bernardino de Almeida 431, 4200-072 Porto, Portugal3Centro de Fisica, Universidade do Minho, Campus de Azurem, 4800-058 Guimaraes, Portugal4Thin Film Center, University of Paisley, Paisley PA1 2BE, Scotland
摘要ZnO films doped with different vanadium concentrations are deposited onto glass substrates by dc reactive magnetron sputtering using a zinc target doped with vanadium. The vanadium concentrations are examined by energy dispersive spectroscopy (EDS) and the charge state of vanadium in ZnO thin films is characterized by x-ray photoelectron spectroscopy. The results of x-ray diffraction (XRD) show that all the films have a wurtzite structure and grow mainly in the c-axis orientation. The grain size and residual stress in the deposited films are estimated by fitting the XRD results. The optical properties of the films are studied by measuring the transmittance. The optical constants (refractive index and extinction coefficient) and the film thickness are obtained by fitting the transmittance. All the results are discussed in relation with the doping of the vanadium.
Abstract：ZnO films doped with different vanadium concentrations are deposited onto glass substrates by dc reactive magnetron sputtering using a zinc target doped with vanadium. The vanadium concentrations are examined by energy dispersive spectroscopy (EDS) and the charge state of vanadium in ZnO thin films is characterized by x-ray photoelectron spectroscopy. The results of x-ray diffraction (XRD) show that all the films have a wurtzite structure and grow mainly in the c-axis orientation. The grain size and residual stress in the deposited films are estimated by fitting the XRD results. The optical properties of the films are studied by measuring the transmittance. The optical constants (refractive index and extinction coefficient) and the film thickness are obtained by fitting the transmittance. All the results are discussed in relation with the doping of the vanadium.
WANG Li-Wei;;XU Zheng;MENG Li-Jian;Vasco Teixeira;SONG Shi-Geng;XU Xu-Rong. Influence of Concentration of Vanadium in Zinc Oxide on Structural and Optical Properties with Lower Concentration[J]. 中国物理快报, 2009, 26(7): 77801-077801.
WANG Li-Wei, , XU Zheng, MENG Li-Jian, Vasco Teixeira, SONG Shi-Geng, XU Xu-Rong. Influence of Concentration of Vanadium in Zinc Oxide on Structural and Optical Properties with Lower Concentration. Chin. Phys. Lett., 2009, 26(7): 77801-077801.
[1] \"{Ozg\"{ur \"{U et al 2005 J. Appl. Phys. 98 041301 [2] Zhang X Y et al 2007 Chin. Phys. Lett. 24 1032 [3] Lin Q G et al 2008 Chin. Phys. Lett. 25 4223 [4] Yang P D et al 2002 Adv. Funct. Mater. 12 323 [5] Ohno H 1998 Science 281 951. [6] Dietl T et al 2000 Science 287 1019 [7] Pearton S J et al 2004 J. Vac. Sci. Technol. B 22 932 [8] Sato K et al 2000 Jpn. J. Appl. Phys. II 39L555 [9] Sato K and Katayama-Yoshida H 2001 Physica E 10 251 [10] Zhang F C et al 2009 Chin. Phys. Lett. 26016105 [11] Sato K et al 2001 Jpn. J. Appl. Phys. II 40L334 [12] Ruan Y B et al 2006 Chin. J. Inorg. Chem. 222247 [13] Ishida Y et al 2004 Physica B 351 304 [14] Hong N H et al 2005 J. Appl. Phys. 97 312 [15] Vyatkin A F et al 2005 Nucl. Instrum. Method. Phys.Res. B 237 179 [16] Ye Z Z and Tang J F 1989 Appl. Opt. 28 2817 [17] Wang Y G et al 2003 J. Appl. Phys. 94 1597 [18] Weller M T 1997 Inorganic Materials Chemistry(Oxford: Oxford University) [19] Teng X Y et al 2007 Chin. Phys. Lett. 24 1073 [20] Solieman A et al 2006 Thin Solid Films 502205 [21] O'Leary S K, Johnson S R and Lim P K 1997 J. Appl.Phys. 82 3334 [22] Mehan N et al 2004 J. Appl. Phys. 96 3134 [23] Hong W Q 1989 J. Phys. D 22 1384 [24] Berggren L et al 2001 J. Appl. Phys. 90 1860
2009, Vol. 26 
