Anomalous Pressure Behavior of N-Cluster Emissions in CaAs0.973Sb0.022N0.005
WANG Wen-Jie1, DENG Jia-Jun1, FU Xing-Qiu2, HU Bing1, DING Kun1
1Mathematics and Physics Department, North China Electric Power University, Beijing 1022062State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083
Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005
WANG Wen-Jie1, DENG Jia-Jun1, FU Xing-Qiu2, HU Bing1, DING Kun1
1Mathematics and Physics Department, North China Electric Power University, Beijing 1022062State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083
摘要Photoluminescence of GaAs0.973Sb0.022N0.005 is investigated at different temperatures and pressures. Both the alloy band edge and the N-related emissions, which show different temperature and pressure dependences, are observed. The pressure coefficients obtained in the pressure range 0-1.4GPa for the band edge and N-related emissions are 67 and 45meV/GPa, respectively. The N-related emissions shift to a higher energy in the lower pressure range and then begin to redshift at about 8.5GPa. This redshift is possibly caused by the increase of the X-valley component in the N-related states with increasing pressure.
Abstract：Photoluminescence of GaAs0.973Sb0.022N0.005 is investigated at different temperatures and pressures. Both the alloy band edge and the N-related emissions, which show different temperature and pressure dependences, are observed. The pressure coefficients obtained in the pressure range 0-1.4GPa for the band edge and N-related emissions are 67 and 45meV/GPa, respectively. The N-related emissions shift to a higher energy in the lower pressure range and then begin to redshift at about 8.5GPa. This redshift is possibly caused by the increase of the X-valley component in the N-related states with increasing pressure.
WANG Wen-Jie;DENG Jia-Jun;FU Xing-Qiu;HU Bing;DING Kun. Anomalous Pressure Behavior of N-Cluster Emissions in CaAs0.973Sb0.022N0.005[J]. 中国物理快报, 2009, 26(12): 127101-127101.
WANG Wen-Jie, DENG Jia-Jun, FU Xing-Qiu, HU Bing, DING Kun. Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005. Chin. Phys. Lett., 2009, 26(12): 127101-127101.
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