Transition Metal Silicide Nanowires Growth and Electrical Characterization
PENG Zu-Lin1, LIANG S.2, DENG Luo-Gen1
1School of Science, Beijing Institute of Technology, Beijing 1000812Science and Engineering of Materials Program, Arizona State University, Tempe, AZ, 85287, USA
Transition Metal Silicide Nanowires Growth and Electrical Characterization
PENG Zu-Lin1, LIANG S.2, DENG Luo-Gen1
1School of Science, Beijing Institute of Technology, Beijing 1000812Science and Engineering of Materials Program, Arizona State University, Tempe, AZ, 85287, USA
摘要We report the characterization of self-assembled epitaxially grown transition metal, Fe, Co, Ni, silicide nanowires (TM-NW) growth and electrical transport properties. NWs grown by reactive deposition epitaxy on various silicon surfaces show a dimension of 10nm by 5nm, and several micrometers in length. NW orientations strongly depend on substrate crystal orientation, and follow the substrate symmetry. By using conductive-AFM (c-AFM), the electron transport properties of one single NW were measured, the resistivity of crystalline nickel silicide NW was estimated to be 2×10-2Ω・cm.
Abstract：We report the characterization of self-assembled epitaxially grown transition metal, Fe, Co, Ni, silicide nanowires (TM-NW) growth and electrical transport properties. NWs grown by reactive deposition epitaxy on various silicon surfaces show a dimension of 10nm by 5nm, and several micrometers in length. NW orientations strongly depend on substrate crystal orientation, and follow the substrate symmetry. By using conductive-AFM (c-AFM), the electron transport properties of one single NW were measured, the resistivity of crystalline nickel silicide NW was estimated to be 2×10-2Ω・cm.
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